Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Seunghun Baik"'
Autor:
Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon, Jae Eun Jang
Publikováno v:
Advanced Science, Vol 11, Iss 28, Pp n/a-n/a (2024)
Abstract Ferroelectric field‐effect transistors (FeFETs) are increasingly important for in‐memory computing and monolithic 3D (M3D) integration in system‐on‐chip (SoC) applications. However, the high‐temperature processing required by most
Externí odkaz:
https://doaj.org/article/ba8fd90c58ac4508bb4d846e3c9db3b3
Autor:
Seunghun Baik, Dong-Jae Kwon, Hongki Kang, Jae Eun Jang, Jaewon Jang, Y. S. Kim, Hyuk-Jun Kwon
Publikováno v:
IEEE Access, Vol 8, Pp 172166-172174 (2020)
Recently, a shallow and conformal doping profile is required for promising 3D structured devices. In this study, we deposited the dopant phosphorus (P) using modified plasma assisted doping (PaD) followed by an annealing process to electrically activ
Externí odkaz:
https://doaj.org/article/f1fa4a6838f043fc901446b48cd59073
Publikováno v:
IEEE Electron Device Letters. 43:1315-1318
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b49709f11ade14f0ae05b7ce9ff30b6
https://doi.org/10.1109/led.2022.3182730
https://doi.org/10.1109/led.2022.3182730
Autor:
Jongyeon Baek, Seung-Hwan Kim, Heejae Jeong, Manh-Cuong Nguyen, Daeyoon Baek, Seunghun Baik, An Hoang-Thuy Nguyen, Jong-Hwa Baek, Hyung-jun Kim, Hyuk-Jun Kwon, Rino Choi
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81f97f57777704a56a526bf2abce5fa0
https://doi.org/10.2139/ssrn.4209853
https://doi.org/10.2139/ssrn.4209853
Autor:
Chuck Paeng, Hyuk-Jun Kwon, Seunghun Baik, Bodo Kalkofen, He Zhang, Jae Eun Jang, Hyeokjin Kwon, Y. S. Kim
Publikováno v:
IEEE Electron Device Letters
To achieve a high concentration of dopants over 1 × 1020 cm-3 on germanium (Ge), co-doping with phosphorus (P) and antimony (Sb) by plasma assisted atomic layer deposition (PALD) and a subsequent annealing process [rapid thermal annealing process (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e1b89d96059b9cc7d7441f503a56d4c
https://doi.org/10.1109/led.2019.2931404
https://doi.org/10.1109/led.2019.2931404
Autor:
Hyuk-Jun Kwon, Hyeokjin Kwon, Jaewon Jang, Seunghun Baik, Costas P. Grigoropoulos, Sunkook Kim, Jae Eun Jang
Publikováno v:
Electronics
Volume 8
Issue 2
Electronics, Vol 8, Iss 2, p 222 (2019)
Volume 8
Issue 2
Electronics, Vol 8, Iss 2, p 222 (2019)
The ultra-short pulsed laser annealing process enhances the performance of MoS2 thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aafd92ec2f1d0d189b1a553aa877faa