Zobrazeno 1 - 8 of 8 pro vyhledávání: '"SeungHyun Ha"'
3
Akademický článek
Enhancing the thermostability of lignin peroxidase: Heme as a keystone cofactor driving stability changes in heme enzymes
Autor: Joo Yeong Park, Seunghyun Han, Doa Kim, Trang Vu Thien Nguyen, Youhyun Nam, Suk Min Kim, Rakwoo Chang, Yong Hwan Kim
Publikováno v: Heliyon, Vol 10, Iss 17, Pp e37235- (2024)
Heme-containing enzymes, critical across life's domains and promising for industrial use, face stability challenges. Despite the demand for robust industrial biocatalysts, the mechanisms underlying the thermal stability of heme enzymes remain poorly
Externí odkaz: https://doaj.org/article/b8cf1079390746f9b66b9e687e9a884c
Zobrazit plný text záznamu
4
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor
Autor: In Man Kang, Won-Yong Lee, Jin-Hyuk Bae, Seunghyun Ha, Hyunjae Lee, Jaewon Jang, Changmin Lee, Kwangeun Kim
Publikováno v: Electronics
Volume 9
Issue 3
Electronics, Vol 9, Iss 3, p 523 (2020)
Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The result
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6af2535fa86abd4b445970a366c9152f
Zobrazit plný text záznamu
5
Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors
Autor: Hyunjae Lee, In Man Kang, Changmin Lee, Won-Yong Lee, Seunghyun Ha, Jin-Hyuk Bae, Jaewon Jang
Publikováno v: Semiconductor Science and Technology. 35:115023
Sol–gel-processed Ti-doped SnO2 thin-film transistors (TFTs) were successfully fabricated for the first time, and the effects of the concentration of the Ti dopant on their structural, chemical, and optical properties were investigated. The introdu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14df32e8bac7c9d4bcd4fa69211b3351
https://doi.org/10.1088/1361-6641/abb9fe
Zobrazit plný text záznamu
6
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
Autor: Won-Yong Lee, Jin-Hyuk Bae, Jaewon Jang, Hyunjae Lee, Kwangeun Kim, In Man Kang, Seunghyun Ha
Publikováno v: Electronics, Vol 8, Iss 9, p 955 (2019)
Electronics
Volume 8
Issue 9
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in tur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b0d1bb4f7b2bed5d5ad8c3aa785a261
https://doi.org/10.3390/electronics8090955
Zobrazit plný text záznamu
7
Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM
Autor: Kwangeun Kim, Won-Yong Lee, Hyunjae Lee, Bongho Jang, Seunghyun Ha, Hyuk-Jun Kwon, Jaewon Jang
Publikováno v: Electronics
Volume 8
Issue 9
Electronics, Vol 8, Iss 9, p 947 (2019)
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88391d391589c9956e4d6c9aded2026a
https://doi.org/10.3390/electronics8090947
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje