Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Seung-Kuk Kang"'
Autor:
Ju-Young Jung, Jai-Hyun Kim, Jung-Hoon Park, Hwi San Kim, Hongsik Jeong, Sung Yung Lee, Heung Jin Joo, Do Yeon Choi, Kinam Kim, Seung Kuk Kang, E.S. Lee, Young-Min Kang
Publikováno v:
Integrated Ferroelectrics. 89:106-115
We developed a 1.6 V FRAM embedded device by successfully implementing a 100 nm MOCVD-PZT capacitor with a SrRuO3 electrode and a novel additional top electrode (ATE). ATE was used for preventing hydrogen-reduction damage or metal substance damage, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9022610195aa023551ddddc9f755014f
https://doi.org/10.1080/10584580601077625
https://doi.org/10.1080/10584580601077625
Autor:
Hiroshi Ishiwara, Seung-Kuk Kang
Publikováno v:
Japanese Journal of Applied Physics. 41:6899-6903
LaAlO3 films were prepared on Si (100) substrates by an electron cyclotron resonance (ECR)-sputtering method, with the aim of using these films as an insulator layer in the metal-ferroelectric-[metal-]insulator-semiconductor (MF[M]IS) structure. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d5bce92e15dc3dfcfcca6c4c09df0ef
https://doi.org/10.1143/jjap.41.6899
https://doi.org/10.1143/jjap.41.6899
Autor:
Seung-Kuk Kang, Hiroshi Ishiwara
Publikováno v:
Japanese Journal of Applied Physics. 41:2094-2098
Data retention characteristics of metal–ferroelectric-metal–insulator–semiconductor (MFMIS) diodes were investigated, in which SrBi2Ta2O9 (SBT) was used as a ferroelectric film and Al2O3 was used as an insulating buffer layer. Al2O3 was deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64cfcc3c951c92160eab3e8a01d33059
https://doi.org/10.1143/jjap.41.2094
https://doi.org/10.1143/jjap.41.2094
Autor:
Hiroshi Ishiwara, Seung-Kuk Kang
Publikováno v:
Ferroelectrics. 273:101-106
For FeRAM (Ferroelectric Random Access Memory) applications, good data retention characteristics and superior reliability will be greatly required. In order to fabricate MFMIS (Metal-Ferroelectrics...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c243d32d9f2922d55e585f42759a9a
https://doi.org/10.1080/713716352
https://doi.org/10.1080/713716352
Autor:
Hee San Kim, Jae Hyun Kim, Song Yi Kim, Young Ki Hong, Jung-Hoon Park, Seung Kuk Kang, Woo Song Ahn, Hongsik Jeong, Han Kyung Goh, Won Woong Jung, Jin Young Kang, Do Yeon Choi, Sang Young Lee, Hyunho Kim, D. J. Jung, E.S. Lee, Ju-Young Jung, Young-Min Kang
Publikováno v:
Japanese Journal of Applied Physics. 47:2725-2727
Space charge concentration due to fatigue cycles was examined with an adequate modeling in order to expect read/write endurance of a 64 Mbit one-transistor and one-capacitor (1T1C) ferroelectric random access memory (FRAM). For monitoring the change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d594cb5177e131a3d86032926e1d6f
https://doi.org/10.1143/jjap.47.2725
https://doi.org/10.1143/jjap.47.2725
Autor:
Song Yi Kim, D. J. Jung, Han Kyoung Ko, E.S. Lee, Young Ki Hong, Won Woong Jung, Hongsik Jeong, Seung-Kuk Kang, Heesan Kim, Ju-Young Jung, Jai-Hyun Kim, Young-Min Kang, Sung-Yung Lee, Do Yeon Choi, Jin Young Kang, Hyunho Kim
Publikováno v:
Japanese Journal of Applied Physics. 48:04C066
During the device lifetime tests such as high temperature operational life (HTOL) and high temperature storage (HTS) tests, a physical de-lamination of the IrO2 layer in vertical conjunction to pulsed plate-line, so-called here additional top electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e2c615c44b51b8f9cdfdbacda15205
https://doi.org/10.1143/jjap.48.04c066
https://doi.org/10.1143/jjap.48.04c066
Autor:
Sung-young Lee, Do-Hyun Choi, Kinam Kim, Hongsik Jeong, Bon-jae Koo, Seung-Kuk Kang, Jung-Hun Park, Hyoung-Seub Rhie, Young-Min Kang, H. J. Joo, Hyunho Kim
Publikováno v:
Japanese Journal of Applied Physics. 44:2706
We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ef7fffdabc55af8402dcb0b8bbf250
https://doi.org/10.1143/jjap.44.2706
https://doi.org/10.1143/jjap.44.2706
Autor:
Yoon-Jong Song, Jung-Hoon Park, Hyunho Kim, Nak-Won Jang, Sung-young Lee, Seok-Ho Joo, Seung-Kuk Kang, Kinam Kim, H. J. Joo
Publikováno v:
Japanese Journal of Applied Physics. 43:2199
Since ferroelectric capacitors prepared by 1-mask etching are degraded after the etching, we systematically investigated the origin of the degradation. It was found that the major degradation originates from the formation of the nonstoichiometric and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ed7466e828e55eba1f4ff66d2df59d
https://doi.org/10.1143/jjap.43.2199
https://doi.org/10.1143/jjap.43.2199
A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY.
Autor:
Heung Jin Joo, Seung Kuk Kang, Jung Hoon Park, Hwi San Kim, Jai-Hyun Kim, Ju Young Jung, Do Yeon Choi, Eun Sun Lee, Young Min Kang, Sung Yung Lee, Hong Sik Jeong, Kinam Kim
Publikováno v:
Integrated Ferroelectrics; 2007, Vol. 89 Issue 1, p106-115, 10p, 3 Diagrams, 1 Chart, 10 Graphs
Publikováno v:
Ferroelectrics; Aug2002, Vol. 273 Issue 1, p101-106, 6p