Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Seung-Ki Chae"'
Publikováno v:
Solid State Phenomena. 314:209-213
A study for uniform deposition on whole area of wafer was conducted to help check the uniformity of cleaning technology between wafer center to edge. A new method of particle deposition was devised different from the conventional studies using the ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc342e537d4d8ee96618bb3aa920afe
https://doi.org/10.4028/www.scientific.net/ssp.314.209
https://doi.org/10.4028/www.scientific.net/ssp.314.209
Publikováno v:
The Review of scientific instruments. 92(11)
A study of the uniform deposition of nanoparticles across a 300-mm wafer was conducted to assess the uniformity of the wafer center-to-edge cleaning technique. A new method of particle deposition was devised different from the conventional method usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0e5fe8c848b7c336e12cce5d8f7b590d
https://pubmed.ncbi.nlm.nih.gov/34852556
https://pubmed.ncbi.nlm.nih.gov/34852556
Autor:
Donggeon Kwak, Juhwan Kim, Taesung Kim, Seung-Ki Chae, Cheolmin Shin, Jinhak Choi, Jichul Yang
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P3195-P3200
Various methods such as transmission electron microscopy, scanning electron microscopy, dynamic light scattering (DLS), and scanning mobility particle sizer were utilized to measure size distributions for sub-100 nm colloidal silica. Compared to elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edc851b1d7602aa9e72accefbbdc187
https://doi.org/10.1149/2.0261905jss
https://doi.org/10.1149/2.0261905jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P768-P774
One of the main factors affecting the production yield of semiconductor circuits is contamination by fine particles. Therefore, the wafer cleaning process has become important to the semiconductor manufacturing process. The best method for a cleaning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac83ade1d4cd47d5bb9a3a7c696860dd
https://doi.org/10.1149/2.0081912jss
https://doi.org/10.1149/2.0081912jss
Autor:
Hirokuni Hiyama, Taesung Kim, Satomi Hamada, Nilam Qureshi, Juhwan Kim, Johee Won, Yutaka Wada, Seokjun Hong, Seung-Ki Chae
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P430-P436
This study details the improved ceria abrasive removal on SiO2 wafer during the post CMP water polishing (buff clean) process. Initially, the zeta potentials of the wafer and ceria abrasive were measured according to pH and compared with the zeta pot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cf67564127e69c4f763197ed6abd0d
https://doi.org/10.1149/2.0171908jss
https://doi.org/10.1149/2.0171908jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P3128-P3132
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d8c52e71019032f7028e397d31096d
https://doi.org/10.1149/2.0221905jss
https://doi.org/10.1149/2.0221905jss
Publikováno v:
Proceedings of the International Display Workshops. :612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b002e51f21216293eabd72a494c0bc55
https://doi.org/10.36463/idw.2021.0612
https://doi.org/10.36463/idw.2021.0612
Publikováno v:
Review of Scientific Instruments. 92:113704
A study of the uniform deposition of nanoparticles across a 300-mm wafer was conducted to assess the uniformity of the wafer center-to-edge cleaning technique. A new method of particle deposition was devised different from the conventional method usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f093a11b981c02cd868d41c61806008
https://doi.org/10.1063/5.0067262
https://doi.org/10.1063/5.0067262
Publikováno v:
Journal of Photopolymer Science and Technology. 23:709-713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6542fb414fe1cbf17554d4c4ba567c
https://doi.org/10.2494/photopolymer.23.709
https://doi.org/10.2494/photopolymer.23.709
Publikováno v:
ECS Transactions. 16:47-59
It was demonstrated firstly that the relative higher etch rate of titanium silicide relative to silicon oxide in HF-based solution was ascribed to the interaction of the positively-charged hydrogen with titanium, which has very low electron affinity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73acc5da3b50e7cf1dc31deabacabb6a
https://doi.org/10.1149/1.3108353
https://doi.org/10.1149/1.3108353