Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Seung-Jun Bae"'
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 68:2409-2413
A duo-binary signaling has been applied to both transmitter and receiver for high-speed low-power DRAM interface. The transmitter consists of a half-rate voltage-mode time-interleaved mixing duo-binary driver and a 2-tap feed-forward equalizer. The v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09d7807f6bb8ecfbbdc4ad6d372f7a8
https://doi.org/10.1109/tcsii.2021.3050823
https://doi.org/10.1109/tcsii.2021.3050823
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:9-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69c9cdb913f1e13ec8a1738f8d3c543
https://doi.org/10.5573/jsts.2021.21.1.009
https://doi.org/10.5573/jsts.2021.21.1.009
Autor:
Hyong-Ryol Hwang, Young-Soo Sohn, Young Hoon Son, Seungseob Lee, Seung-Jun Bae, Hyuck-Joon Kwon, Jung-Bae Lee, Byongwook Na, Chang-Kyo Lee, Young-Hwa Kim, Dongkeon Lee, Duk-ha Park, Daesik Moon, Kwang-Il Park, Tae-Young Oh, Youn-sik Park, Kyung-Soo Ha
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:157-166
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM is implemented in a 1 $\times$ nm DRAM process. Various techniques are applied to achieve higher bandwidth and lower power than LPDDR4X. To increase data rate, a WCK clocking scheme that is less vulnerable to power no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c0d249a308f28f1535a7ab42eb92fc
https://doi.org/10.1109/jssc.2019.2938396
https://doi.org/10.1109/jssc.2019.2938396
Publikováno v:
Electronics Letters. 56:1103-1105
This Letter presents a self-capacitance sensing (SCS) technique for touch screen panel with the alternating panel charge sharing (APCS) that effectively suppresses low-frequency noise and achieves a better signal-to-noise ratio (SNR). With the propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077392929604c235f7186b6ec22ea206
https://doi.org/10.1049/el.2020.1425
https://doi.org/10.1049/el.2020.1425
Autor:
Chang-Yong Lee, Seung-Jun Bae, Jeong-Woo Lee, Seung-Hoon Oh, Yong-Hun Kim, Young-Soo Sohn, Gyo-Young Jin, Gong-Heum Han, Dong-seok Kang, Young-Hun Seo, Gun-hee Cho, Seung-Hyun Cho, Sam-Young Bang, Seong-Jin Jang, Youn-sik Park, Yong-Jun Kim, Kwang-Il Park, Jung-Hwan Choi, Seouk-Kyu Choi, Kyung-Bae Park, Sung-Geun Do, Young-Ju Kim, Keon-woo Park, Ji-Hak Yu, Jae-Sung Kim, Su-Yeon Doo, Jae-Koo Park, Chan-Yong Lee, Chang-Ho Shin, Hye-Jung Kwon, Byung-Cheol Kim, Hyuk-Jun Kwon, Sang-Sun Kim, Min-Su Ahn, Hyun-Soo Park, Chul-Hee Jeon, Lee Yong-Jae, Ki-Hun Yu, Sang-Yong Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:197-209
The graphic DRAM standard GDDR6 is developed to overcome the limitation of previous standards GDDR5/5X for achieving high-speed operation. This paper introduces 16-Gb GDDR6 DRAM with a per-bit trainable single-ended decision feedback equalizer (DFE),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d08bc4f852cc052f17c7e89b51e1192
https://doi.org/10.1109/jssc.2018.2883395
https://doi.org/10.1109/jssc.2018.2883395
Autor:
Seouk-Kyu Choi, Young-Kwan Kim, Seung-Jun Bae, Seung-Hyun Cho, Jae-Woo Jung, Dae Hyun Kim, Byung-Cheol Kim, Sung-Woo Yoon, Jae-Koo Park, Yong-Hun Kim, Si-Hyeong Cho, Jung-Bae Lee, Jinyong Choi, Dae-Hyun Kwon, Seong-hoon Kim, Chan-Young Kim, Byongwook Na, Yong-Jun Kim, Jae-Woo Lee, Dong-Yeon Park, Hye-In Choi, Reum Oh, Hyung-Jin Kim, Min-Su Ahn, Dongkeon Lee, Jihwa You, Nam Sung Kim, Jaemin Choi, Jun-Ho Kim, Jeong-Don Ihm, Hyung-Seok Cha, Kyoung-Ho Kim, Young-Jae Park, Min-Soo Jang
Publikováno v:
ISSCC
The demand for mobile DRAM has increased, with a requirement for high density, high data rates, and low-power consumption to support applications such as 5G communication, multiple cameras, and automotive. Thus, density has increased from 2Gb [1] to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0248e1efec4151e800304c25c07a72
https://doi.org/10.1109/isscc42613.2021.9366050
https://doi.org/10.1109/isscc42613.2021.9366050
Autor:
Kim Sang-Yun, Junghwan Park, Soo-bong Chang, Won-Il Bae, Ki-Won Park, Hyuck-Joon Kwon, Seung-Jun Bae, Geun-Tae Park, Hyung-Joon Chi, Kyung-Ho Lee, Hye-In Choi, Ji-Suk Kwon, Gil-Young Kang, Seung-Jun Lee, Hyunyoon Cho, Jin-Seok Heo, Young-Soo Sohn, Lim Suk-Hyun, Kyung Ryun Kim, Kwang-Il Park, Daesik Moon, Chang-Kyo Lee, Jae-Hoon Jung, Dongkeon Lee, Chang-Ho Shin, Cheol Kim, Jung-Bae Lee, Young-Il Lim, Dae Hyun Kim, Jinsol Park, Seouk-Kyu Choi, Jin-Hun Jang, Ki-Han Kim, Young Hoon Son, Byongwook Na, Isak Hwang, Duk-ha Park, Su-Yeon Doo, Choi Yeon-Kyu
Publikováno v:
ISSCC
Energy efficiency in mobile devices is a pivotal criteria from the overall system point of view, Although the 7,5Gb/s 8Gb LPDDR5 [1], with low-power schemes (internal data copy, dynamic-voltage-frequency scaling (DVFS), and a deep-sleep mode (DSM)),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d3bf8b7cf0e24bdfbbca56a91c30e7
https://doi.org/10.1109/isscc19947.2020.9062914
https://doi.org/10.1109/isscc19947.2020.9062914
Autor:
Jongwook Park, Jung-Hwan Choi, Seung-Jun Bae, Si-Hyeong Cho, Seunseob Lee, Young-Ryeol Choi, In-Dal Song, Kwang-Il Park, Ki-Ho Kim, Jin-Seok Heo, Young-Soo Sohn, Dong-Hun Lee, Eunsung Seo, Junha Lee, Gil-Hoon Cha, Hyuck-Joon Kwon, Jin-Hyeok Baek, Daesik Moon, Youn-sik Park, Kyung-Soo Ha, Chang-Kyo Lee, Seok-Hun Hyun, Seong-Jin Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:2906-2916
This paper presents a dual-loop two-step ZQ calibration scheme with a 20-nm DRAM process to support dedicated supply voltages ( $V_{DD}$ and $V_{DDQ}$ ). The proposed calibration scheme improves system signal integrity by maintaining the targeted out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357e219db9060554f370c477b6da0d04
https://doi.org/10.1109/jssc.2018.2850937
https://doi.org/10.1109/jssc.2018.2850937
Autor:
Jae-Yoon Sim, Il-Min Yi, Seong-Jin Jang, Jung-Hwan Choi, Min-Kyun Chae, Hong-June Park, Byungsub Kim, Seok-Hun Hyun, Seung-Jun Bae
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:144-154
A time-based (TB) receiver (RX) with a 2-tap TB decision feedback equalizer (DFE) is proposed for mobile DRAM interface. The TB RX consists of a voltage-to-time converter (VTC), a TB DFE, and a time comparator. The VTC converts the RX input voltage t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a32e78941e2538965600b9d1b057d6
https://doi.org/10.1109/jssc.2017.2746698
https://doi.org/10.1109/jssc.2017.2746698