Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Seung-Geol Nam"'
Publikováno v:
APL Materials, Vol 5, Iss 7, Pp 074107-074107-6 (2017)
Although triboelectric nanogenerator (TENG) has been explored as one of the possible candidates for the auxiliary power source of portable and wearable devices, the output energy of a TENG is still insufficient to charge the devices with daily mot
Externí odkaz:
https://doaj.org/article/16215f4303db49b487c50a22c4d97acf
Autor:
Keun Wook Shin, Yeonchoo Cho, Seung-Geol Nam, Alum Jung, Eun-Kyu Lee, Chang-Seok Lee, Min-Hyun Lee, Hyeon-Jin Shin, Kyung-Eun Byun
Publikováno v:
ACS Applied Nano Materials. 6:4170-4177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b9ca7297e5d163c3de0e6ad5e1869d8
https://doi.org/10.1021/acsanm.2c05165
https://doi.org/10.1021/acsanm.2c05165
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 71:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9797938c2ea474273609b696dee6823
https://doi.org/10.1109/tim.2022.3200364
https://doi.org/10.1109/tim.2022.3200364
Autor:
Hagyoul Bae, Jinseong Heo, Sung-Hyun Kim, Sanghyun Jo, Yunseong Lee, Duk-Hyun Choe, Taehwan Moon, Seung-Geol Nam
Publikováno v:
Materials Today. 50:8-15
Fluorite-structure ferroelectrics — in particular the orthorhombic phase of HfO2 — are of paramount interest to academia and industry because they show unprecedented scalability down to 1-nm-thick size and are compatible with Si electronics. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71a861f2dde17aea470ba97978f234d
https://doi.org/10.1016/j.mattod.2021.07.022
https://doi.org/10.1016/j.mattod.2021.07.022
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2e69d6e15b4a9bccf91e8854f42c3ee
https://pubmed.ncbi.nlm.nih.gov/35952355
https://pubmed.ncbi.nlm.nih.gov/35952355
Autor:
Cheng-Hsiang Hsu, Yoonsoo Rho, Steve Volkman, Brian Tyrrell, Suman Datta, Corey Stull, Zhan Zhang, Woo-Bin Song, Suraj Cheema, Jim Ciston, Padraic Shafer, Apurva Mehta, Won-Tae Koo, Chenming Hu, Gianni Pinelli, Jong-Ho Bae, Li-Chen Wang, Seung-Geol Nam, Matthew A. Cook, Dong Jin Jung, Jorge Gomez, Dominick Pipitone, Patrick Fay, Sayeef Salahuddin, John W. Freeland, Chung-Hsun Lin, Jinseong Heo, Kab-Jin Nam, Wenshen Li, Mohamed Mohamed, Nirmaan Shanker, Costas P. Grigoropoulos, Matthew San Jose, Ramamoorthy Ramesh, Vladimir Stoica, Ghazal Soheli, Christopher J. Tassone, Dong Ik Suh, David Thompson, Yu-Hung Liao, Ravi Rastogi, Shang-Lin Hsu, Daewoong Kwon
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to the adoption of high-κ diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f8aaa2e1c2c48a54ff1b9ae31d4a4b
https://doi.org/10.21203/rs.3.rs-413053/v1
https://doi.org/10.21203/rs.3.rs-413053/v1
Autor:
Kwang-Hee Lee, Seung-Geol Nam, Sanghyun Jo, Hagyoul Bae, Jinseong Heo, Yunseong Lee, Sang-Wook Kim, Duk-Hyun Choe, Taehwan Moon
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
In this work, we report sub-ns polarization switching in highly scaled 25 nm ferroelectric (FE) FinFET with Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric (FE)/SiO 2 dielectric (DE) gate stack for high performance CPU application for the first time. Observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a331c2cd3b1fe5d4d1a75b37f31a92a
https://doi.org/10.1109/iedm13553.2020.9372076
https://doi.org/10.1109/iedm13553.2020.9372076
Autor:
Seung-Geol Nam, Sanghyun Jo, Yunseong Lee, Jinseong Heo, Taehwan Moon, Kwang-Hee Lee, Sang-Wook Kim
Publikováno v:
ECS Meeting Abstracts. :1319-1319
Recent discovery of ferroelectricity from non-centrosymmetric orthorhombic phase (Pca21) of Hf/Zr oxides [1] has brought enormous research interests and activities because the material compatibility with CMOS process and its scalability to a few nm t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb6b26a9845870e7da4741e06832debb
https://doi.org/10.1149/ma2020-01221319mtgabs
https://doi.org/10.1149/ma2020-01221319mtgabs
Autor:
Seung-Geol Nam, Yeonchoo Cho, Seongjun Park, Changsik Kim, Min Sup Choi, Faisal Ahmed, Inyong Moon, Daeyeong Lee, Won Jong Yoo, Hyeon-Jin Shin
Publikováno v:
ACS nano. 11(2)
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d8d4a1c29be7140d74abd911d86bb1d
https://pubmed.ncbi.nlm.nih.gov/28088846
https://pubmed.ncbi.nlm.nih.gov/28088846
Autor:
Kiyoung Lee, Seung-Geol Nam, Seongjun Park, Yeonchoo Cho, Sungwoo Hwang, Heejeong Jeong, Eunkyu Lee, Jaeho Lee, Hyangsook Lee, Jinseong Heo, Sangyeob Lee
Publikováno v:
Nano letters. 16(11)
Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal–insulator–semiconductor field effect transistors built from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9212d242023e71caaf0d3bcdd24d7ec4
https://pubmed.ncbi.nlm.nih.gov/27704847
https://pubmed.ncbi.nlm.nih.gov/27704847