Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Seung-Dong Yang"'
Publikováno v:
Micromachines, Vol 10, Iss 6, p 356 (2019)
In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is propos
Externí odkaz:
https://doaj.org/article/c5cbd3882cba47a394345e5031a45e9e
Publikováno v:
Materials Express. 11:1615-1618
This paper analyzes data retention characteristics to determine process effects on the trap energy distribution of silicon nitride in silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. Nitride films were prepared by low-pressure chemic
Autor:
Seung Dong Yang
Publikováno v:
Food Supplements and Biomaterials for Health. 2
Autor:
Gyuseok Cho, Chul Huh, Ho-Jin Yun, Jae-Gab Lim, Chan Lim, Hi-Deok Lee, Jun-Kyo Jung, Jung Hyun Park, Seung-Dong Yang, Ga-Won Lee, Seong-gye Park
Publikováno v:
Solid-State Electronics. 140:134-138
In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiN X ) charge trapping layer. The Si-NCs were in-situ grown by PECVD witho
Autor:
Seong-Won Chea, Jeong-Hyun Park, Ho-Jin Yun, Seung-Dong Yang, Jun-Kyo Jeong, Ga-Won Lee, Ki-Yun Eom, Hi-Deok Lee
Publikováno v:
Thin Solid Films. 638:89-95
In this study, Al-doped zinc oxide (AZO) thin films with different Al concentrations fabricated by atomic layer deposition are investigated to determine the Al doping effect for AZO/ZnO double-stacked active layer thin-film transistor (TFT) applicati
Fabrication and Characterization of TFT Gas Sensor with ZnO Nanorods Grown by Hydrothermal Synthesis
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 30:229-234
Autor:
Ho-Jin Yun, Jin-Un An, Yu-Mi Kim, Ga-Won Lee, Seung-Dong Yang, Hi-Deok Lee, Jin-Sup Kim, Young-Uk Ko, Kwang-Seok Jeong, Seong-Hyeon Kim
Publikováno v:
Thin Solid Films. 598:109-114
Low-frequency noise (1/f noise) has been analyzed to characterize the amorphous/crystalline silicon heterojunction diodes with passivation layer of a-Si:H (p–i–n), Al2O3 (p–Al2O3–n), and ZnO (p–ZnO–n) and without passivation (p–n). Four
Publikováno v:
Transactions on Electrical and Electronic Materials. 16:183-186
Autor:
Seong-Won Chea, Jin-Seob Kim, Yu-Mi Kim, Seung-Dong Yang, Hi-Deok Lee, Ho-Jin Yun, Ga-Won Lee, Ki-Yun Eom
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 52:59-63
This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap densit
Autor:
Seung-Dong Yang, Ho-Jin Yun, Kwang-Seok Jeong, Jin-Seop Kim, Yu-Mi Kim, Ga-Won Lee, Ki-Yun Eom
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 28:291-294
Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical