Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Seung-Chul Song"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:2304-2315
A self-timed pulsed latch (STPL) is proposed for low $V_{\mathrm {DD}}$ operation. By comparing input and output, the transparency window is adaptively generated in STPL, which resolves the hold time problem of the conventional pulsed latch. The meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b629c6ac7aff2aeaa1c08b6aacb62a3
https://doi.org/10.1109/jssc.2019.2907774
https://doi.org/10.1109/jssc.2019.2907774
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:609-620
A novel high-speed and highly reliable sense-amplifier-based flip-flop with transition completion detection (SAFF-TCD) is proposed for low supply voltage ( $V_{\mathrm {DD}}$ ) operation. The SAFF-TCD adopts the internally generated detection signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bd3501381e4876ebaf5ccf0954c5e5
https://doi.org/10.1109/tvlsi.2017.2777788
https://doi.org/10.1109/tvlsi.2017.2777788
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 63:1023-1032
Although near-threshold voltage (NTV) operation is an attractive means of achieving high energy efficiency, it can degrade the circuit stability of static random access memory (SRAM) cells. This paper proposes an NTV 7T SRAM cell in a 14 nm FinFET te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c294059c5aaf366aac924aceb5040dd
https://doi.org/10.1109/tcsi.2016.2556118
https://doi.org/10.1109/tcsi.2016.2556118
Publikováno v:
Journal of the Korean society for railway. 19:213-223
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64c03e83f6393b709b7c09b6349dee4
https://doi.org/10.7782/jksr.2016.19.2.213
https://doi.org/10.7782/jksr.2016.19.2.213
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23:2748-2752
Although near-threshold ( $V_{\mathrm {\mathbf {th}}}$ ) operation is an attractive method for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, particularly, for static random access memory (SRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60284f1c58b924a630443cf30068031
https://doi.org/10.1109/tvlsi.2014.2367234
https://doi.org/10.1109/tvlsi.2014.2367234
Autor:
Ukjin Jung, Young Gon Lee, James Walter Blatchford, Brian K. Kirkpatrick, Hiroaki Niimi, Younggy Kim, Seung-Chul Song, Jin Ju Kim, Byoung Hun Lee
Publikováno v:
Microelectronic Engineering. 142:1-6
Gate leakage current is reduced up to 24% using a highly doped polysilicon gate/nitrided oxide gate stack. Interestingly, various factors that could affect the gate leakage current such as equivalent oxide thickness (EOT), overlap capacitance, gate d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::891fd6efe1fc914b4495383d8f835b92
https://doi.org/10.1016/j.mee.2015.06.005
https://doi.org/10.1016/j.mee.2015.06.005
Publikováno v:
IEEE Transactions on Electron Devices. 62:1754-1759
A figure of merit (FOM) for a CMOS system on chip (SoC) is proposed to correctly assess different CMOS SoCs in the near-threshold voltage ( $V_{{\rm {th}}})$ region, where the supply voltage ( $V_{{\rm {DD}}})$ is slightly higher than $V_{{\rm {th}}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e958d318a3652b2f69f4d2355c210a
https://doi.org/10.1109/ted.2015.2424220
https://doi.org/10.1109/ted.2015.2424220
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 62:1538-1545
As the semiconductor technology scales down, the read stability and write ability of a static random-access memory (SRAM) cell are degraded because of the increased mismatch among its transistors. Extremely thin silicon-on-insulator is one of the att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05bee10799c4ddde4391ff5bab6b2f8
https://doi.org/10.1109/tcsi.2015.2416814
https://doi.org/10.1109/tcsi.2015.2416814
Autor:
Hanwool Jeong, Juhyun Park, Seong-Ook Jung, Joseph Wang, Younghwi Yang, Seung Chul Song, Geoffrey Yeap
Publikováno v:
IEEE Transactions on Electron Devices. 62:1698-1704
A near-threshold voltage ( $V_{{\rm {th}}}$ ) operation circuit is important for both energy- and performance-constrained applications. The conventional 6-T SRAM bit-cell designed for super- $V_{{\rm {th}}}$ operation cannot achieve the target SRAM b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::559bed7077ad8fc06af0634a4e68e4a9
https://doi.org/10.1109/ted.2015.2420681
https://doi.org/10.1109/ted.2015.2420681
Autor:
Jason C. S. Woo, Joseph Wang, P. R. Chidi Chidambaram, Seung Chul Song, Frank Yang, Po-Yen Chien, Geoffrey Yeap
Publikováno v:
Microelectronics Reliability. 54:1090-1095
Continued scaling of transistor has resulted in severe short channel effects and transport degradation. In addition, variability in deeply scaled transistor such as threshold voltage ( V TH ) variability has emerged as a major challenge for circuit a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2015cd11593f76ce5f1b117d4972b7
https://doi.org/10.1016/j.microrel.2013.11.003
https://doi.org/10.1016/j.microrel.2013.11.003