Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Seung Youl Kang"'
Autor:
Byeongmoon Lee, Ji-Young Oh, Hyeon Cho, Chul Woong Joo, Hyungsoo Yoon, Sujin Jeong, Eunho Oh, Junghwan Byun, Hanul Kim, Seunghwan Lee, Jiseok Seo, Chan Woo Park, Sukyung Choi, Nae-Man Park, Seung-Youl Kang, Chi-Sun Hwang, Seong-Deok Ahn, Jeong-Ik Lee, Yongtaek Hong
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Electronic skin that spatially maps pressure distribution through imaging shows limited performance despite improvements to data acquisition. Here, the authors report ultraflexible, transparent electroluminescent skin capable of high-resolution imagi
Externí odkaz:
https://doaj.org/article/640c5052a4b34cf3a79e2db6b8dbc8f0
Autor:
Jeong Hun Lee, Sohyeon Kang, Nae-Man Park, Jin-Wook Shin, Chul Woong Joo, Jonghee Lee, Seong-Deok Ahn, Seung-Youl Kang, Jaehyun Moon
Publikováno v:
Journal of Information Display, Vol 19, Iss 4, Pp 171-177 (2018)
Porous nanocellulose paper was fabricated and applied as a light outcoupling medium. The nanocellulose papers were prepared using cellulose powder and a high-pressure homogenizing process. The translucent nanocellulose paper had high total transmitta
Externí odkaz:
https://doaj.org/article/a43a3cf2ee1c4e4db3abd20cacd9808b
Autor:
Solyee Im, Seung-Youl Kang, Yeriaron Kim, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo
Publikováno v:
Micromachines, Vol 11, Iss 10, p 910 (2020)
Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in wh
Externí odkaz:
https://doaj.org/article/1f095b79cad947a4b333de91717183a0
Autor:
Ji-Young Oh, Chi-Sun Hwang, Yong Suk Yang, Myoung Song, Junmo Kim, Taek-Soo Kim, Sujung Kim, Himchan Oh, Seung Youl Kang, Jae-Eun Pi, Jae Bon Koo, Chan Woo Park, Hyoyoung Lee
Publikováno v:
ACS applied materialsinterfaces. 14(43)
Stretchable electronics have become essential for custom-built electronics, self-assembling robotics, and wearable devices. Although many stretchable electronics contain integrated systems, they still limit bulky connection systems. We introduce a ne
Autor:
Wonkuk Seo, Jae-Eun Pi, Sung Haeung Cho, Seung-Youl Kang, Seong-Deok Ahn, Chi-Sun Hwang, Ho-Sik Jeon, Jong-Uk Kim, Myunghee Lee
Publikováno v:
Sensors, Vol 18, Iss 1, p 293 (2018)
In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Re
Externí odkaz:
https://doaj.org/article/d65fbbce13434edc95abbab6c2f7f14c
Autor:
Young Sam Park, Seong Hoon Yu, Jae-Eun Pi, Chul Woong Joo, Seung-Youl Kang, Syed Zahid Hassan, Mingyun Kang, Juhee Kim, Dae Sung Chung
Publikováno v:
Materials horizons. 8(11)
In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing the morphology consisting of matrix polymer/loc
Publikováno v:
IEEE Electron Device Letters. 40:1032-1035
Effects of controlling the film thickness of ferroelectric Hf0.5Zr0.5O2 (HZO) thin film were investigated to figure out the important design strategies for the metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Even though the maxim
Autor:
Seung-Youl Kang, Young Sam Park, Dae Sung Chung, Jaehyun Moon, Kang Me Lee, Seongdeok Ahn, Jae-Eun Pi, Chul Woong Joo, Juhee Kim
Publikováno v:
Organic Electronics. 70:101-106
A high-performance small molecular near-infrared (NIR) organic photodiode (OPD) including indium (III) phthalocyanine chloride (ClInPc):C60 bulk heterojunction as a photoactive layer is fabricated by using only vacuum processes that are highly compat
Autor:
Yeriaron Kim, Seung Youl Kang, Jiyong Woo, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon
Publikováno v:
Journal of Physics D: Applied Physics. 55:335101
Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors were characterized to elucidate the optimum design schemes for the ferroelectric field-effect transistor applications. The Hf1−x Zr x O2 (HZO) thin films (18 nm) were prepared on t
Autor:
Jong-Pil Im, Seok-Hwan Moon, Jung Hun Lee, Seung Youl Kang, Sung Min Yoon, Solyee Im, Sung-Hoon Hong, Jeha Kim
Publikováno v:
Journal of the Korean Physical Society. 73:1712-1715
To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electro