Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Seung Uk Han"'
Publikováno v:
Journal of Trauma and Injury. 32:226-237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6758076e0a7d906aa1143245454c4d13
https://doi.org/10.20408/jti.2019.020
https://doi.org/10.20408/jti.2019.020
Autor:
Seung-Mok Shin, Taiki Uemura, E. S. Jung, Seungbae Lee, Y. Ji, Hyunjo Shin, Joo-Byoung Yoon, H. J. Goo, Yun-Jae Lee, Kyongtaek Lee, Jun-Kyun Park, S. H. Hwang, Jung Hyoung Lee, Jongkyun Kim, G. T. Jeong, Seung-Uk Han, Y. J. Song, K. C. Park, Sun-Ghil Lee, G. H. Koh, B. Y. Seo, Sangwoo Pae, Junhee Lim
Publikováno v:
IRPS
STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of STT-MRAM with ECC off mode under various relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f393364e289889248b945cecfaaea618
https://doi.org/10.1109/irps.2019.8720429
https://doi.org/10.1109/irps.2019.8720429
Autor:
Sungho Jang, E. S. Jung, Hyeongsun Hong, Seung-Uk Han, Satoru Yamada, Sungkweon Baek, Wonchang Jeong, Kijae Huh, Sung-Sam Lee, Junhee Lim, Gyo-Young Jin, Moonyoung Jeong, Kyu-Pil Lee
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
An analysis on the degradation of DRAM performance caused by the NBTI degradation of p-MOSFET is first to be reported. To improve the NBTI immunity, three candidates are examined. First, minimizing Si-H bonds at Si/SiON interface through controlling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf69b35ae8a07cbf9d40f0f8d2cfe34d
https://doi.org/10.1109/imw.2016.7495279
https://doi.org/10.1109/imw.2016.7495279
Autor:
Hong Sun Hwang, Soo Won Kim, Young Hyun Jun, Churoo Park, Byung Sick Moon, Ahn Woo Song, Seong Jin Jang, Jong Pil Son, Joo Sun Choi, Jin-Ho Kim, Seung Uk Han, Satoru Yamada
Publikováno v:
IEICE Transactions on Electronics. :1690-1697
A reliable antifuse scheme has been very hard to build, which has precluded its implementation in DRAM products. We devised a very reliable multi-cell structure to cope with the large process variation in the DRAM-cell-capacitor type antifuse system.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a1e1b0e6924d1592fd11027004f1c81
https://doi.org/10.1587/transele.e94.c.1690
https://doi.org/10.1587/transele.e94.c.1690
Autor:
Youl-Kyong Lee, Kyung-Hwan Ahn, Jong-Won Kim, Kee-Ryong Choi, Jae-Chul JeGal, Seung-Uk Han, Joong-Hoon Kim
Publikováno v:
The Korean Journal of Ecology. 28:99-103
Actual vegetation map drown with the scale 1 to 100 and Alnus japonica population in Ja-neup and Woong-neup of the Mujechi moor were described in order to monitor long-termly and preserve permanently, where is a very rare Molinietea moor and a legall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c80115413db7a8cdfcbf88ca322a3a92
https://doi.org/10.5141/jefb.2005.28.2.099
https://doi.org/10.5141/jefb.2005.28.2.099
Autor:
Jin Ho Kim, Hongsun Hwang, Seong-Jin Jang, Seung Uk Han, Young-Hyun Jun, Byung-sick Moon, Ahn Woo Song, Joo Sun Choi, Churoo Park, Jong-Pil Son, Soo-Won Kim
Publikováno v:
ESSCIRC
A highly reliable antifuse cell and its sensing scheme that can be actually adopted in DRAM are presented. A multi-cell structure is newly devised to circumvent the large process variation problems of the DRAM cell capacitor type antifuse system. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7bc40b9cf90ff5fa301798cc5a32e5d
https://doi.org/10.1109/esscirc.2010.5619748
https://doi.org/10.1109/esscirc.2010.5619748
Autor:
Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo Sun Choi, Young-Hyun Jun, Soo-Won Kim
Publikováno v:
Proceedings of the ESSCIRC, 2010; 2010, p482-485, 4p