Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Seung Mahn Lee"'
Autor:
Wonseop Choi, Kyu-Se Choi, Zhan Chen, Seung-Mahn Lee, Rajiv K. Singh, G. Bahar Basim, Brij M. Moudgil
Publikováno v:
MRS Bulletin. 27:752-760
The formulation of slurries for chemical–mechanical planarization (CMP) is currently considered more of an art than a science, due to the lack of understanding of the wafer, slurry, and pad interactions involved. Several factors, including the larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::163aa4b060f8601a58257d166fdc38c9
https://doi.org/10.1557/mrs2002.245
https://doi.org/10.1557/mrs2002.245
Publikováno v:
Journal of The Electrochemical Society. 145:3963-3966
We describe a novel, solid-phase crystallization method for synthesizing large-grained, textured silicon films on amorphous substrates at relatively low processing temperatures ( 10 μm) for films crystallized by the SSC method. Hall measurements con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0a24caa0f1a2ae84a7cff44b7c594b
https://doi.org/10.1149/1.1838899
https://doi.org/10.1149/1.1838899
Publikováno v:
MRS Proceedings. 767
In chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and parti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dbc87ae134b4ff38ce0dd537caa8a96
https://doi.org/10.1557/proc-767-f1.10
https://doi.org/10.1557/proc-767-f1.10
Publikováno v:
MRS Proceedings. 767
Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6e4fd3a75d50ba3624b542bd3608fc
https://doi.org/10.1557/proc-767-f2.9
https://doi.org/10.1557/proc-767-f2.9
Publikováno v:
MRS Proceedings. 671
This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e98fbd7a0806c754af48f5cc543318
https://doi.org/10.1557/proc-671-m5.1
https://doi.org/10.1557/proc-671-m5.1
Publikováno v:
MRS Proceedings. 613
In this paper, results of studies on the addition of salt to a polishing slurry, in terms of its effect on slurry stability, SiO2 polishing rate and surface roughness of the polished surface are presented. Three salts, viz. LiCl, NaCl and KCl were se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7aea1d0631a6a319c4931daa113989
https://doi.org/10.1557/proc-613-e1.7.1
https://doi.org/10.1557/proc-613-e1.7.1
Publikováno v:
MRS Proceedings. 613
The chemical mechanical polishing of copper in several slurry chemistries based on iodate and iodine oxidizers has been investigated. Benzotriazole (BTA) and potassium iodide (KI) were used for preparing the polishing slurry chemistries based iodate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a96c6a22a86c68e43b6195ff79328f
https://doi.org/10.1557/proc-613-e7.8.1
https://doi.org/10.1557/proc-613-e7.8.1
Autor:
Rajiv K. Singh, Seung-Mahn Lee
Publikováno v:
MRS Proceedings. 557
We have investigated a novel surface-seeded crystallization technique at low processing temperatures (≤ 550°C) and high pressures (10MPa~25MPa) using polished polycrystalline diamond seeds. By controlling the high pressure, the nucleation and grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd21f600fef0cdeda37e4f1fba631000
https://doi.org/10.1557/proc-557-219
https://doi.org/10.1557/proc-557-219
Publikováno v:
Journal of The Electrochemical Society. 151:G185
The effects of alkaline ionic salts on silica chemical mechanical polishing ~CMP! have been studied. Particle size, zeta potential, and stability via turbidity tests have been characterized. Particle size and size distributions have been found to inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4055331ce3afb79c8dfcc8e329a9c3a
https://doi.org/10.1149/1.1644609
https://doi.org/10.1149/1.1644609
Publikováno v:
Journal of The Electrochemical Society. 151:G368
The surface coverage of particles between pad and wafer has been studied as a function of down load, particle size, and concentration in order to investigate oxide chemical mechanical polishing (CMP) mechanism. In situ friction force measurements hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5be1cd47010d20178311f017138721d
https://doi.org/10.1149/1.1690295
https://doi.org/10.1149/1.1690295