Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Seung Ji Bae"'
Autor:
Jin Park, Sang Ho Lee, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, In Man Kang
Publikováno v:
Results in Physics, Vol 63, Iss , Pp 107873- (2024)
In this study, a complementary field-effect transistor (CFET) based on a polycrystalline silicon (poly-Si) stacked-nanosheet (NS) structure with a grain boundary (GB) is designed and analyzed using a technology computer-aided design (TCAD) simulation
Externí odkaz:
https://doaj.org/article/ea749661f4b64898bf056f0c4bfd61a4
Autor:
Kang, Jin Park, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man
Publikováno v:
Nanomaterials; Volume 13; Issue 13; Pages: 2026
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::e8bbb65e8c0fc32836aafbb961c81cea
Autor:
Jin Park, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 2026 (2023)
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) sim
Externí odkaz:
https://doaj.org/article/27c604c3ae4e4933a8d74bcfe3e70e37