Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Seung Hoon Sung"'
Publikováno v:
Sensors, Vol 15, Iss 10, Pp 26315-26330 (2015)
In this study, we experimentally validated the normalized uniform load surface (NULS) curvature method, which has been developed recently to assess damage localization in beam-type structures. The normalization technique allows for the accurate asses
Externí odkaz:
https://doaj.org/article/ad81d2864b2a45cb807f926b34ad330d
Autor:
W. Rachmady, Ashish Agrawal, Huang Cheng-Ying, B. Krist, Matthew V. Metz, Chouksey Siddharth, Jack Portland Kavalieros, A. A. Oni, Jessica M. Torres, Kimin Jun, Rajat Kanti Paul, Seung Hoon Sung, Hui Jae Yoo, T. Talukdar, G. Elbaz, Wong Lawrence D, Mueller Brennen, Robert B. Turkot, Fischer Paul B, P. Sears, Benjamin Chu-Kung, G. Dewey, Phan Anh, T. Michaelos
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report a short channel high performance Ge PMOS integrated with Si NMOS in sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON = 497 μA/μm at I OFF = 8nA/μm and I ON = 630 μA/μm at I OFF = 100nA/μm and V DS = -0.5V i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e7b3524af2d1b2c9ac22c6739970bb
https://doi.org/10.1109/iedm19573.2019.8993626
https://doi.org/10.1109/iedm19573.2019.8993626
Autor:
Seung Hoon Sung, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Han Wui Then, Fischer Paul B
Publikováno v:
DRC
Due to its high Baliga and Johnson FoMs [1], [2] (Table I), GaN is a promising material for high-voltage power and high frequency, high-power RF applications [3]–[6]. Epitaxial integration of GaN on foreign substrates such as SiC [7]–[14], [30]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39432435b8f8e38c3140beccfbb47f61
https://doi.org/10.1109/drc46940.2019.9046449
https://doi.org/10.1109/drc46940.2019.9046449
Autor:
Kwang Soo Kim, James Gary Eden, Min Hwan Kim, Benben Li, C. M. Herring, Seung Hoon Sung, J.K. Yoon, Clark J. Wagner, Jin Hoon Cho, Peter P. Sun, Seong-Ju Lee, Sung-Jin Park, E. S. Kim, T. L. Kim, Thomas J. Houlahan
Publikováno v:
IEEE Transactions on Plasma Science. 41:661-675
Over approximately the past decade, a subfield of plasma science has arisen that is redefining frontiers in the physics of low temperature plasma and its applications. Concerned with the confinement of weakly ionized, nonequilibrium plasma to cavitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cd3485cdf0e3a24cd082c8c9d0cab0d
https://doi.org/10.1109/tps.2013.2253132
https://doi.org/10.1109/tps.2013.2253132
Autor:
Ramanan V. Chebiam, Jasmeet S. Chawla, Seung Hoon Sung, Colin T. Carver, James S. Clarke, Mona Mayeh, Hui Jae Yoo, Bojarski Stephanie A, Robert B. Turkot, B. Krist, Manish Chandhok, Christopher J. Jezewski, M. J. Kobrinski, M. Harmes
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
A process to achieve 6 nm minimum dimension interconnect wires is realized using standard 193 nm lithography. Various metals including copper are optimized to gap fill features, and tested for electrical performance and reliability. Measurements show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6d19c9cb91ec92150a2e1406226f6
https://doi.org/10.1109/iitc-amc.2016.7507682
https://doi.org/10.1109/iitc-amc.2016.7507682
Autor:
Marko Radosavljevic, G. Yang, Sanaz K. Gardner, Sansaptak Dasgupta, Fischer Paul B, Seung Hoon Sung, Loren Chow, Valluri R. Rao, Han Wui Then
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
The characteristics of high-k gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs is reviewed. High-k gate dielectric depletion-mode GaN MOS-HEMT with thin AlInN polarization layer of 2.5nm in the gate stack is shown to exhibit "negativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f1e4e7e0248141a0b4189d4608ff96
https://doi.org/10.1109/iedm.2015.7409710
https://doi.org/10.1109/iedm.2015.7409710
Publikováno v:
IEEE Transactions on Plasma Science. 35:215-222
Addressable microcavity plasma devices with two- or three-electrode, dielectric barrier designs have been fabricated in 20 times 20 or 50 times 50 device arrays in Si(100) and characterized in the rare gases. Each device comprises a metal/Si electrod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7442c939b2751accbb20c1ebd3f7f3
https://doi.org/10.1109/tps.2007.893467
https://doi.org/10.1109/tps.2007.893467
Publikováno v:
Sensors
Volume 15
Issue 10
Pages 26315-26330
SENSORS(15): 10
Sensors, Vol 15, Iss 10, Pp 26315-26330 (2015)
Sensors (Basel, Switzerland)
Volume 15
Issue 10
Pages 26315-26330
SENSORS(15): 10
Sensors, Vol 15, Iss 10, Pp 26315-26330 (2015)
Sensors (Basel, Switzerland)
In this study, we experimentally validated the normalized uniform load surface (NULS) curvature method, which has been developed recently to assess damage localization in beam-type structures. The normalization technique allows for the accurate asses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bac1957434b57b54edea2e7a839474da
Autor:
Valluri R. Rao, R. Chau, Sansaptak Dasgupta, Loren Chow, Sanaz K. Gardner, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, G. Yang
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
We have fabricated L G =90nm high-K dielectric enhancement-mode (e-mode) GaN MOS-HEMT which shows low I OFF =70nA/µm (V D =3.5V, V G =0V), low R ON =490Ω-µm, high I D,max =1.4mA/µm, and excellent power-added efficiency (PAE) of 80% at RF output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e7709c893f39ea0c055a94518120d0d
https://doi.org/10.1109/vlsit.2015.7223674
https://doi.org/10.1109/vlsit.2015.7223674
Autor:
James S. Clarke, M. Harmes, Mona Mayeh, Hazel Lang, Hui Jae Yoo, Naskar Sudipto, Seung Hoon Sung, Bojarski Stephanie A, John J. Plombon, Colin T. Carver, Kevin L. Lin, Manish Chandhok, B. Krist, Jasmeet S. Chawla
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5a53afe92975deba3040bb52431efa
https://doi.org/10.1109/iitc-mam.2015.7325612
https://doi.org/10.1109/iitc-mam.2015.7325612