Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Seung Gyun Kim"'
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively env
Externí odkaz:
https://doaj.org/article/7d464db5ba55469f9fd6cde86278685f
Publikováno v:
Journal of Materials Research and Technology, Vol 13, Iss , Pp 1285-1295 (2021)
High strength and ductility are vital material properties required in alloys used for structural applications at cryogenic temperatures. However, the simultaneous provision of these characteristics is challenging because the two properties are mutual
Externí odkaz:
https://doaj.org/article/de43a2d9f6504b6ca3af0f91dec02cae
Autor:
Eun Seong Yu, Seung Gyun Kim, Seo Jin Kang, Hyuk Su Lee, Jong Mo Lee, Seung Jae Moon, Byung Seong Bae
Publikováno v:
Electronic Materials Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d3252c0077327a7d441f8be7c80b8c
https://doi.org/10.1007/s13391-023-00431-6
https://doi.org/10.1007/s13391-023-00431-6
Publikováno v:
Journal of Materials Research and Technology, Vol 13, Iss, Pp 1285-1295 (2021)
High strength and ductility are vital material properties required in alloys used for structural applications at cryogenic temperatures. However, the simultaneous provision of these characteristics is challenging because the two properties are mutual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c2260195c31001ee7b8c7e20f1182ed
https://doi.org/10.1016/j.jmrt.2021.05.025
https://doi.org/10.1016/j.jmrt.2021.05.025
Publikováno v:
ECS Transactions. 44:1081-1086
In current semiconductor manufacturing, as the feature size of integrated circuit (IC) devices continuously shrinks, detecting endpoint in low open area plasma etch process is more difficult than before. For endpoint detection, various kinds of senso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a45fe6ddc45efc8929f58a9cc28c1a
https://doi.org/10.1149/1.3694432
https://doi.org/10.1149/1.3694432
Publikováno v:
ECS Transactions. 44:1087-1091
Bosch process is developed for advanced microstructure devices and etch endpoint detection (EPD) is demanded for 'notching' (as feature profile degradation) or reducing thickness of the underlying stop. One method commonly used to detect plasma proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b99b768e6e3503bb30103bbd7f7bca
https://doi.org/10.1149/1.3694433
https://doi.org/10.1149/1.3694433
Publikováno v:
ECS Transactions. 34:943-948
In current semiconductor manufacturing, plasma processes such as etch and CVD take the portion at least 40% throughout of integration processes. As the feature size of integrated circuit (IC) devices continuously shrinks, detecting endpoint in low op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c467726ef717fb13200ba274678a8bd3
https://doi.org/10.1149/1.3567696
https://doi.org/10.1149/1.3567696
Publikováno v:
Advances in Neural Networks-ISNN 2010 ISBN: 9783642133176
ISNN (2)
ISNN (2)
In this paper, extended Hidden Markov Model (eHMM) is employed to resolve transition detection problems in plasma etch processes using optical emission spectroscopy (OES) data The proposed eHMM framework is a one of various semi-Markov models: a comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4b9aa0d778ed85df3a1a1647f85829
https://doi.org/10.1007/978-3-642-13318-3_58
https://doi.org/10.1007/978-3-642-13318-3_58
