Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Seung Dam Hyun"'
Autor:
Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park, Cheol Seong Hwang
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-11 (2020)
Abstract The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precu
Externí odkaz:
https://doaj.org/article/77cf457fd9bb4d67ba357b186fdefdd0
Autor:
Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 4, Iss 12, Pp n/a-n/a (2018)
Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current
Externí odkaz:
https://doaj.org/article/2dd0d59d75a04740bcfcedfdb1f5aa0b
Autor:
Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang
Publikováno v:
APL Materials, Vol 5, Iss 4, Pp 042301-042301-7 (2017)
Time domain electric pulse measurements were conducted on a capacitor consisting of a Pt film as the top electrode, atomic-layer-deposited 6.5-nm-thick amorphous Al2O3 as the dielectric layer, and two-dimensional electron gas (2DEG) at the interface
Externí odkaz:
https://doaj.org/article/bcdac9517fd84d34818b75a26e9ccecc
Publikováno v:
ACS Applied Electronic Materials. 4:5351-5360
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414a4b0f32d8603d405873b7f901e68e
https://doi.org/10.1021/acsaelm.2c01043
https://doi.org/10.1021/acsaelm.2c01043
Autor:
Seungsoo Kim, Chanyoung Yoo, Hyoung Gyun Kim, Cheol Seong Hwang, Jin Woo Choi, Seung Dam Hyun, Bo Wen Wang, Hoin Lee
Publikováno v:
Journal of Materials Chemistry C. 9:15359-15374
This research reports on the atomic layer deposition (ALD) mechanism of MgO thin film using bis(cyclopentadienyl) magnesium [Mg(Cp)2] as the Mg-precursor and O3 or H2O as an oxygen source. The different growth temperature effects of growth behaviour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296b9c80066dd614a0cb5627f79b3ee1
https://doi.org/10.1039/d1tc04223h
https://doi.org/10.1039/d1tc04223h
Autor:
Seung Dam Hyun, Taehwan Moon, Yong Bin Lee, Baek Su Kim, Ho Hyun Kim, Beom Yong Kim, Hyeon Woo Park, Min Hyuk Park, Cheol Seong Hwang, Keum Do Kim, Young Hwan Lee, Jangho Roh
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-11 (2020)
The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a17ee2d43c228a0668408c0fea8757d1
http://link.springer.com/article/10.1186/s11671-020-03301-4
http://link.springer.com/article/10.1186/s11671-020-03301-4
Autor:
Suk Hyun Lee, Beom Yong Kim, Seung Dam Hyun, Cheol Seong Hwang, Seung Gyu Ryoo, Yong Bin Lee, Hyeon Woo Park, In Soo Lee, Minsik Oh
Publikováno v:
Nanoscale. 13(4)
Charge injection from the near-by-electrode can occur during ferroelectric switching in the ferroelectric-dielectric bilayer due to the high field applied to the adjacent dielectric layers. The aim of this study is to investigate the effect of the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22ad027ad878376b30ede2e1e2d44164
https://pubmed.ncbi.nlm.nih.gov/33476352
https://pubmed.ncbi.nlm.nih.gov/33476352
Autor:
Taehwan Moon, Keum Do Kim, Han Joon Kim, Young Hwan Lee, Yu Jin Kim, Cheol Seong Hwang, Seung Dam Hyun, Min Hyuk Park
Publikováno v:
ACS Applied Materials & Interfaces. 10:42666-42673
The utilization of the morphotropic phase boundary (MPB) between the newly found ferroelectric orthorhombic phase and the tetragonal phase in an HfO2-ZrO2 solid solution is suggested for a high-capacitance dielectric capacitor. Being different from o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6794e8921c9b518a7a825858f22a7874
https://doi.org/10.1021/acsami.8b15576
https://doi.org/10.1021/acsami.8b15576
Autor:
Taehwan Moon, Yong Bin Lee, Baek Su Kim, Yu Jin Kim, Young Hwan Lee, Keum Do Kim, Min Hyuk Park, Han Joon Kim, Young Jae Kwon, Cheol Seong Hwang, Hyeon Woo Park, Seung Dam Hyun
Publikováno v:
ACS Applied Materials & Interfaces. 10:35374-35384
Interests in nanoscale integrated ferroelectric devices using doped HfO2-based thin films are actively reviving in academia and industry. The main driving force for the formation of the metastable non-centrosymmetric ferroelectric phase is considered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8939d05bbd30a46c8618e668d2a0a05e
https://doi.org/10.1021/acsami.8b13173
https://doi.org/10.1021/acsami.8b13173
Autor:
Keum Do Kim, Taehwan Moon, Yu Jin Kim, Seung Dam Hyun, Yong Bin Lee, Cheol Seong Hwang, Min Hyuk Park, Han Joon Kim, Hyeon Woo Park, Young Hwan Lee
Publikováno v:
Nano Letters. 17:7796-7802
Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially ey
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a07b642b1be7433698bdb1488680c35
https://doi.org/10.1021/acs.nanolett.7b04008
https://doi.org/10.1021/acs.nanolett.7b04008