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pro vyhledávání: '"Seung‐Un Lee"'
Autor:
Seung-Un Lee, Jaewook Jeong
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 26-32 (2019)
The variations in the electrical and mechanical properties of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-hu
Externí odkaz:
https://doaj.org/article/afc4e613c6f2429c91467352c564d437
Autor:
Manman Hu, Andi Muhammad Risqi, Jianchang Wu, Liang Chen, Jaewang Park, Seung‐Un Lee, Hyun‐Sung Yun, Byung‐Wook Park, Christoph J. Brabec, Sang Il Seok
Publikováno v:
Advanced Functional Materials.
Autor:
Seung Un Lee, Na Young Jung
Publikováno v:
Journal of the Korean Society of Stereotactic and Functional Neurosurgery. 18:42-46
Neurosurgical treatments, including both lesioning procedures and deep brain stimulation (DBS), are considered effective treatments for patients with intractable essential tremor (ET). However, it can be challenging to arrive at the decision to perfo
Autor:
Seung-Un Lee, Jaewook Jeong
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085206-085206-7 (2018)
In this paper, the short time annealing effects on the solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were studied as a function of different ambient conditions. By comparing the effects of various inert
Externí odkaz:
https://doaj.org/article/af197345265f4d1abd6c6306f71c4772
Publikováno v:
Angewandte Chemie. 134
Understanding the intrinsic phase stability and inherent band gap of formamidinium lead triiodide (FAPbI
Publikováno v:
2022 IEEE International Symposium on Mixed and Augmented Reality Adjunct (ISMAR-Adjunct).
Autor:
Hyeonwoo Kim, Sang Il Seok, Maengsuk Kim, Hanul Min, Jun Hee Lee, Keunsu Choi, Gwisu Kim, Seung-Un Lee
Publikováno v:
Science. 366:749-753
Maintaining the bandgap The bandgap of the black α-phase of formamidinium-based lead triiodide (FAPbI 3 ) is near optimal for creating high-efficiency perovskite solar cells. However, this phase is unstable, and the additives normally used to stabil
Autor:
Jaewook Jeong, Seung-Un Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 26-32 (2019)
The variations in the electrical and mechanical properties of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-hu
Autor:
Hyeonwoo Kim, Kyoung Su Lee, Min Jae Paik, Do Yoon Lee, Seung‐Un Lee, Eunyoung Choi, Jae Sung Yun, Sang Il Seok
Publikováno v:
Advanced Functional Materials. 32:2110473
Publikováno v:
The Journal of Internal Korean Medicine. 38:509-519