Metal-oxide-semiconductor characterization of silicon surfaces thermally oxidized after reactive ion etching and magnetically enhanced reactive ion etching.

Autor: Settlemyer, Kenneth T., Ruzyllo, Jerzy, Hwang, David K., Leary, Herbert J.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 2, p249-252, 4p