Zobrazeno 1 - 10 of 14 pro vyhledávání: '"Setsuo Nakajima"'
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Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure
Autor: Setsuo Nakajima, Mitsutaka Matsumoto, Tsuyoshi Uehara, Syun Ito, Maki Suemitsu, Shogo Murashige, Hirokazu Fukidome, Yohei Inayoshi, Yasutake Toyosihima
Publikováno v: ECS Transactions. 25:345-350
By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::450f0b266cb64c2a0108f6ee969ca097
https://doi.org/10.1149/1.3202672
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4
Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure
Autor: Mitsutaka Matsumoto, Setsuo Nakajima, T. Yara, Yohei Inayoshi, Yasutake Toyoshima, Maki Suemitsu, Tsuyoshi Uehara
Publikováno v: Thin Solid Films. 516:6673-6676
High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2640b4587514468fbc9b62f460d8bcc5
https://doi.org/10.1016/j.tsf.2007.11.041
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Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Autor: Setsuo Nakajima, E. Miyamoto, Yasutake Toyoshima, Mitsutaka Matsumoto, Yohei Inayoshi, Tsuyoshi Uehara, Maki Suemitsu, T. Yara
Publikováno v: Applied Surface Science. 254:6208-6210
Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based powe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a0cb2faf10804565ffb8f4bf2a856bd
https://doi.org/10.1016/j.apsusc.2008.02.186
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7
Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure
Autor: Yohei Inayoshi, Maki Suemitsu, Setsuo Nakajima, Yasutake Toyoshima, Tsuyoshi Uehara, Mitsutaka Matsumoto
Publikováno v: MRS Proceedings. 1066
Low temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiNX films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7efd35bab1a22bbc2ab70bc4f8d86cec
https://doi.org/10.1557/proc-1066-a05-05
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