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Autor:
Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich
Publikováno v:
AIP Advances, Vol 14, Iss 11, Pp 115301-115301-5 (2024)
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The result
Externí odkaz:
https://doaj.org/article/9923b916a6d44bda88e7f3cb4f869191