Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Sertap Kavasoglu, A."'
Publikováno v:
In Measurement July 2012 45(6):1499-1509
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c330cedaf68b1eb78b91427522bbadd3
https://doi.org/10.2139/ssrn.4232848
https://doi.org/10.2139/ssrn.4232848
Publikováno v:
Physica B: Condensed Matter. 649:414504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de07546c58ca0382166f5581634302e1
https://doi.org/10.1016/j.physb.2022.414504
https://doi.org/10.1016/j.physb.2022.414504
Autor:
Sertap Kavasoglu, A., Birgi, Ozcan, Kavasoglu, Nese, Oylumluoglu, Gorkem, Osman Kodolbas, A., Kangi, Rifat, Yilmaz, Okan
Publikováno v:
In Journal of Alloys and Compounds 2011 509(39):9394-9398
Autor:
Sertap Kavasoglu, A., Yakuphanoglu, Fahrettin, Kavasoglu, Nese, Pakma, Osman, Birgi, Ozcan, Oktik, Sener
Publikováno v:
In Journal of Alloys and Compounds 2010 492(1):421-426
Autor:
Kavasoglu, Nese, Sertap Kavasoglu, A.
Publikováno v:
In Physica B: Physics of Condensed Matter 2008 403(17):2807-2810
Publikováno v:
Materials Research Bulletin. 70:804-808
Zero barrier height inhomogeneity in the device is generally assumed to conform to Gaussian distribution in the literature. In this study, zero barrier height inhomogeneity has been adopted to obey random distribution. Cell was divided into elementar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad6a8152fdcb871b9acd8d9b23dad6d
https://doi.org/10.1016/j.materresbull.2015.06.007
https://doi.org/10.1016/j.materresbull.2015.06.007
Autor:
Bayhan, Habibe1 hbayhan@mu.edu.tr, Sertap Kavasoglu, A.1
Publikováno v:
Turkish Journal of Physics. 2003, Vol. 27 Issue 6, p529-535. 7p. 5 Graphs.
Publikováno v:
Physica B: Condensed Matter. 412:64-69
Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current–volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15fcf45c313ff538fbec1b02eade40d3
https://doi.org/10.1016/j.physb.2012.11.030
https://doi.org/10.1016/j.physb.2012.11.030