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of 84
pro vyhledávání: '"Serruys, Yves"'
The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing part
Externí odkaz:
http://arxiv.org/abs/1710.08284
Autor:
Fourches, Nicolas, Coppolani, Xavier, Desforge, Daniel, Kebbiri, Mariam, Kumar, Vishant, Serruys, Yves, Gutierrez, Gaêlle, Leprêtre, Frederic, Jomard, François
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Pre
Externí odkaz:
http://arxiv.org/abs/1708.08330
The effect of He-ion irradiation on a short-range ordering in model Fe100-xCrx (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 7.5 dpa with ions of 0.25 and 2.0 MeV.
Externí odkaz:
http://arxiv.org/abs/1402.5612
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 21 December 2018 912:221-225
Autor:
Lou, Yu, Dourdain, Sandrine, Rey, Cyrielle, Serruys, Yves, Simeone, David, Mollard, Nicolas, Deschanels, Xavier
Publikováno v:
In Microporous and Mesoporous Materials October 2017 251:146-154
Autor:
Thomé, Lionel, Velişa, Gihan, Debelle, Aurélien, Miro, Sandrine, Garrido, Frédérico, Trocellier, Patrick, Serruys, Yves
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 May 2014 326:219-222
Autor:
Chaâbane, Nihed, Flem, Marion Le, Tanguy, Morgane, Urvoy, Stéphane, Sandt, Christophe, Dumas, Paul, Serruys, Yves
Publikováno v:
In Journal of Nuclear Materials August 2013 439(1-3):123-130
Autor:
Do, Ngoc-Long, Bérerd, Nicolas, Moncoffre, Nathalie, Yang, Feng, Trocellier, Patrick, Serruys, Yves, Gorse-Pomonti, Dominique
Publikováno v:
In Journal of Nuclear Materials 2011 419(1):168-176
Publikováno v:
Journal of the Serbian Chemical Society, Vol 73, Iss 1, Pp 121-126 (2008)
SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6-2×10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argo
Externí odkaz:
https://doaj.org/article/21ead77c3c5c44428611160c37a48ccd
Autor:
Serruys, Yves
Th.--Sci. phys.--Nancy 1, 1982. N°: 774.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb360969240