Zobrazeno 1 - 10
of 201
pro vyhledávání: '"Serna, Rosalía"'
Autor:
Fuentes-Edfuf, Yasser, Sánchez-Gil, José A., Pardo, Marina Garcia, Serna, Rosalía, Tsibidis, George D., Giannini, Vincenzo, Solis, Javier, Siegel, Jan
Publikováno v:
Applied Surface Science 493, 948 (2019)
Exposure of metal surfaces to multiple ultrashort laser pulses under certain conditions leads to the formation of well-defined periodic surface structures. We show how the period of such structures in steel can be tuned over a wide range by controlli
Externí odkaz:
http://arxiv.org/abs/2010.14090
Publikováno v:
Applied Surface Science 520, 146307 (2020)
We have investigated the formation of laser-induced periodic surface structures (LIPSS or ripples) on silicon upon excitation with p-polarized excimer laser pulses in the deep ultraviolet region (wavelength = 193 nm, pulse duration = 20 ns). Well-pro
Externí odkaz:
http://arxiv.org/abs/2011.01866
Autor:
Garcia-Pardo, Marina, Pinero, Eva Nieto, Petford-Long, Amanda K., Serna, Rosalia, Toudert, Johann
Active and analog tuning of the phase of light is needed to boost the switching performance of photonic devices. However, demonstrations of this type of tuning in the pivotal visible spectral region are still scarce. Herein we report active analog tu
Externí odkaz:
http://arxiv.org/abs/1912.01120
Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n near 10) and a negative ultraviolet visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing
Externí odkaz:
http://arxiv.org/abs/1904.07951
Autor:
Toudert, Johann, Serna, Rosalia, Pardo, Marina García, Ramos, Nicolas, Peláez, Ramón J., Maté, Belén
Integrating an absorbing thin film into a resonant cavity is the most practical way to achieve perfect absorption of light at a selected wavelength in the mid-to-far infrared, as required to target blackbody radiation or molecular fingerprints. The c
Externí odkaz:
http://arxiv.org/abs/1810.08601
Autor:
Jin, Yu, Bond, Charles W., Gomez-Rodrigue, Pilar, Nieto-Pinero, Eva, Leonard, Russell L., Gosztola, David J., Johnson, Jacqueline A., Gonzalo, Jose, Serna, Rosalia, Petford-Long, Amanda K.
Publikováno v:
In Thin Solid Films 31 July 2022 754
Autor:
Martin-Sanchez, Javier, Trotta, Rinaldo, Mariscal, Antonio, Serna, Rosalia, Piredda, Giovanni, Stroj, Sandra, Edlinger, Johannes, Schimpf, Christian, Aberl, Johannes, Lettner, Thomas, Wildmann, Johannes, Huang, Huiying, Yuan, Xueyong, Ziss, Dorian, Stangl, Julian, Rastelli, Armando
Publikováno v:
Semiconductor Science and Technology 33, 013001 (2018)
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce
Externí odkaz:
http://arxiv.org/abs/1710.07374
Autor:
Mariscal, Antonio, Quesada, Adrián, Martín-Luengo, Aitana Tarazaga, García, Miguel Ángel, Bonanni, Alberta, Fernández, José, Serna, Rosalia
Publikováno v:
Applied Surface Science (2018) 456 980-984
Nanocrystalline textured EuO thin films are prepared by an oxygen loss process from a pure Eu2O3 bulk ceramic target through pulsed laser deposition in vacuum at room temperature. X-ray diffraction spectra evidence a well-defined diffraction peak cor
Externí odkaz:
http://arxiv.org/abs/1706.08291
Autor:
Toudert, Johann, Serna, Rosalia
Plasmonic and Mie resonances in subwavelength nanostructures provide an efficient way to manipulate light below the diffraction limit that has fostered the growth of plasmonics and nanophotonics. Plasmonic resonances have been mainly related with the
Externí odkaz:
http://arxiv.org/abs/1704.02039
Autor:
Martín-Sánchez, Javier, Mariscal, Antonio, De Luca, Marta, Martín-Luengo, Aitana Tarazaga, Gramse, Georg, Halilovic, Alma, Serna, Rosalía, Bonanni, Alberta, Zardo, Ilaria, Trotta, Rinaldo, Rastelli, Armando
Publikováno v:
Nano Res. (2017). https://doi.org/10.1007/s12274-017-1755-4
Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to sur
Externí odkaz:
http://arxiv.org/abs/1703.06186