Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Serhii Kryvyi"'
Autor:
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, Julita Smalc-Koziorowska, Szymon Grzanka, Jacek Kacperski, Grzegorz Nowak, Sławomir Kret, Łucja Marona, Piotr Perlin
Publikováno v:
Materials, Vol 17, Iss 18, p 4520 (2024)
The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity.
Externí odkaz:
https://doaj.org/article/f9aca1eeca754e9a9f3bee150265933a
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Janusz Sadowski, Anna Kaleta, Serhii Kryvyi, Dorota Janaszko, Bogusława Kurowska, Marta Bilska, Tomasz Wojciechowski, Jarosław Z. Domagala, Ana M. Sanchez, Sławomir Kret
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped s
Externí odkaz:
https://doaj.org/article/773c5bdaf8cd4ec7b00a94d6437a3055
Autor:
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, Szymon Grzanka, Ewa Grzanka, Łucja Marona, Piotr Perlin
Publikováno v:
Materials, Vol 16, Iss 19, p 6568 (2023)
In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth morphology and non-linear I–V characteristics. Heat treatment in a N2 atmosphere leads to degrad
Externí odkaz:
https://doaj.org/article/80dab5480dba436bb1eeb762d57231ba
Autor:
Ewa Przezdziecka, Karolina M Paradowska, Rafal Jakiela, Serhii Kryvyi, Eunika Zielony, Ewa Placzek-Popko, Wojciech Lisowski, Piotr Sybilski, Dawid Jarosz, Abinash Adhikari, Marcin Stachowicz, Adrian Kozanecki
Publikováno v:
Materials, Vol 15, Iss 23, p 8409 (2022)
The article presents a systematic study of Sb-doped Zn1−xMgxO layers, with various concentrations of Mg, that were successfully grown by plasma-assisted MBE on polar a- and c-oriented and non-polar r-oriented sapphire substrates. X-ray diffraction
Externí odkaz:
https://doaj.org/article/9d86464889834050bac37036bf3a8a3c
Autor:
Kamil Koronski, Krzysztof P. Korona, Serhii Kryvyi, Aleksandra Wierzbicka, Kamil Sobczak, Stanislaw Krukowski, Pawel Strak, Eva Monroy, Agata Kaminska
Publikováno v:
Materials, Vol 15, Iss 8, p 2756 (2022)
In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fi
Externí odkaz:
https://doaj.org/article/4e3089bcc89a468a9fb7d09c5e6e028b
Autor:
Ashfaq Ahmad, Pawel Strak, Kamil Koronski, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Izabella Grzegory, Aleksandra Wierzbicka, Serhii Kryvyi, Eva Monroy, Agata Kaminska, Stanislaw Krukowski
Publikováno v:
Materials, Vol 14, Iss 17, p 4935 (2021)
In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds
Externí odkaz:
https://doaj.org/article/ee1c5a9d55a641c3be4cac52a306fed4
Autor:
Maksym Stetsenko, Tetiana Margitych, Serhii Kryvyi, Lidia Maksimenko, Ali Hassan, Svitlana Filonenko, Βaikui Li, Junle Qu, Elke Scheer, Sergii Snegir
Publikováno v:
Nanomaterials, Vol 10, Iss 3, p 512 (2020)
Here we study the morphology and the optical properties of assemblies made of small (17 nm) gold nanoparticles (AuNPs) directly on silicon wafers coated with (3-aminopropyl)trimethoxysilane (APTES). We employed aliphatic 1,6-hexanedithiol (HDT) molec
Externí odkaz:
https://doaj.org/article/131b55f607f949e98c8fb8d2128b36a0