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Autor:
Serhii Derenko, Sergiy V. Kondratenko, Yuriy I. Mazur, Oleksandr I. Datsenko, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXIX.
We report a study of the photoconductivity mechanism and transport paths of photoexcited charge carriers in the GeSn/Ge/Si heterostructures. The dark conductivity was studied as a function of temperature, which allowed to identify of the presence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d863440737fffae94895f622a5642d4
https://doi.org/10.1117/12.2583072
https://doi.org/10.1117/12.2583072
