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pro vyhledávání: '"Sergiy Durov"'
Autor:
Sergiy Durov, Oleg A. Mironov, Maksym Myronov, Terence E. Whall, Thomas Hackbarth, Georg Hoeck, Hans-Joest Herzog, Ulf Konig, Hans von Kanel
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I-V characteris
Externí odkaz:
https://doaj.org/article/1a95d2d301aa4d8d935f1d7ccefe28cc
