Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sergio Sapienza"'
Autor:
Giovanna Sozzi, Sergio Sapienza, Giovanni Chiorboli, Lasse Vines, Anders Hallen, Roberta Nipoti
Publikováno v:
IEEE Access, Vol 12, Pp 74230-74238 (2024)
The study focuses on analysing the high-level carrier lifetime ( $\tau _{\mathrm {HL}}$ ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in
Externí odkaz:
https://doaj.org/article/871a51a679484ddb9297526aa8943592
Autor:
Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1072 (2021)
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this
Externí odkaz:
https://doaj.org/article/fe2849df88c248768ae25476a87042b0
Autor:
Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia
Publikováno v:
Materials Science Forum. 1089:57-61
In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both and silicon substrates, using a completely optical measurement setup to measure the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4a26a5d836fbe7f5c0e15f41f262bce
https://doi.org/10.4028/p-3g82bg
https://doi.org/10.4028/p-3g82bg
Publikováno v:
IEEE Transactions on Electron Devices. 68:3254-3260
The open-circuit voltage decay (OCVD) method is a well-known technique for conducting electrical measurements of carrier lifetime: the main advantages lie in the simple setup and the possibility of carrying out measurements in commercial devices with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abf6c58c4c1ea2616f2751d229615b9
https://doi.org/10.1109/ted.2021.3083211
https://doi.org/10.1109/ted.2021.3083211
Autor:
Giovanni Alfieri, Maria Concetta Canino, M. Bellettato, Roberta Nipoti, Giovanna Sozzi, Sergio Sapienza
Publikováno v:
Materials Science Forum. 963:416-419
The activation energy for the electrical activation of 1x1019 cm-3 and of 1x1020 cm-3 ion implanted Al in 4H-SiC has been estimated. Ion implantation temperature and dose rate were in the range 430-500°C and around 1011 cm2s-1, respectively. Post im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8203de1567895ebcb46771a59699e87a
https://doi.org/10.4028/www.scientific.net/msf.963.416
https://doi.org/10.4028/www.scientific.net/msf.963.416
Autor:
Luca Belsito, Marcin Zielinski, Sergio Sapienza, Francesco La Via, M. Ferri, Alberto Roncaglia, Diego Marini
Publikováno v:
Micromachines. 12:1072
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c995315c528fad10fc051ab07ddd1a7
https://doi.org/10.3390/mi12091072
https://doi.org/10.3390/mi12091072
Autor:
P. Cova, C. Sciancalepore, Nicola Delmonte, Giovanni Chiorboli, Roberto Menozzi, Giovanna Sozzi, Danilo Santoro, Sergio Sapienza, Marco Simonazzi
Publikováno v:
Microelectronics Reliability. 114:113789
In this work we propose a new sensor concept to evaluate the degradation of PV arrays due to soiling. It is based on I-V curve analysis coupled with artificial vision inspection of a reference PV module to quantify and identify the type of dirt. In o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff565f8138825ad4dd95bb404a87daa8
https://doi.org/10.1016/j.microrel.2020.113789
https://doi.org/10.1016/j.microrel.2020.113789