Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sergey Zakharchenko"'
Autor:
Sergey Zakharchenko
Publikováno v:
Економічний вісник університету, Iss 32/1, Pp 13-20 (2017)
Subject of research – the impact of education on the level of international competitiveness countries and regions. The purpose of work – to estimate the competitive potential of education of Ukraine and its regions in the international dimension
Externí odkaz:
https://doaj.org/article/5be7dbba245d4b40a5246f31ca201b0e
Publikováno v:
Mathematical Physics and Computer Simulation. :18-26
This study is concerned with the problem of increasing the accuracy of a low-altitude altimeter employing the frequency modulation principle. A way to suppress the “discrete error” of the altimeter by employing additional frequency modulation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21aee95e2c6b7d8e01ca42551f14adf4
https://doi.org/10.15688/mpcm.jvolsu.2021.2.2
https://doi.org/10.15688/mpcm.jvolsu.2021.2.2
Publikováno v:
Mathematical Physics and Computer Simulation. :5-11
This study is concerned with the problem of increasing the accuracy of a low-altitude altimeter employing the frequency modulation principle. A way to suppress the "discrete error" of the altimeter by employing additional «slow» frequency modulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e09845d858ee2cbbe1d238804748cac
https://doi.org/10.15688/mpcm.jvolsu.2020.3.1
https://doi.org/10.15688/mpcm.jvolsu.2020.3.1
Autor:
Vitalii Mikheev, Yury Lebedinskii, Roman V. Kirtaev, Maxim Spiridonov, Sergei Zarubin, Sergey Zakharchenko, Anastasia Chouprik, Dmitrii Negrov
Publikováno v:
ACS Applied Electronic Materials. 1:275-287
The mechanism of the remnant polarization (Pr) growth during the first stage of ferroelectric HfO2-based memory cell operation (the wake-up effect) is still unclear. In this work, we reveal the microscopic nature of the Pr growth in functional ferroe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5761ad38dcfbb0a4beb98c06628f3a
https://doi.org/10.1021/acsaelm.8b00046
https://doi.org/10.1021/acsaelm.8b00046
Autor:
Sergei Zarubin, Dmitrii Negrov, Sergey Zakharchenko, Andrei Zenkevich, A. G. Chernikova, Roman V. Kirtaev, Anastasia Chouprik, Pratyush Buragohain, Alexei Gruverman, Maxim Spiridonov
Publikováno v:
ACS Applied Materials & Interfaces. 10:8818-8826
Because of their full compatibility with the modern Si-based technology, the HfO2-based ferroelectric films have recently emerged as viable candidates for application in nonvolatile memory devices. However, despite significant efforts, the mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0987e851dc93827527e3d9b93c1b6660
https://doi.org/10.1021/acsami.7b17482
https://doi.org/10.1021/acsami.7b17482
Publikováno v:
BIO Web of Conferences, Vol 37, p 00135 (2021)
The study of the impact of huminatrin on the yield and quality of barley grain in the subtaiga zone of the Omsk region on gray forest soils in 2019-2020 showed that the treatment of seeds and feeding of barley during the growing season with the ferti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbb78a6125cb6d8b8ed89f9316ffe5fc
https://doi.org/10.1051/bioconf/20213700135
https://doi.org/10.1051/bioconf/20213700135
Autor:
Anastasia, Chouprik, Sergey, Zakharchenko, Maxim, Spiridonov, Sergei, Zarubin, Anna, Chernikova, Roman, Kirtaev, Pratyush, Buragohain, Alexei, Gruverman, Andrei, Zenkevich, Dmitrii, Negrov
Publikováno v:
ACS applied materialsinterfaces. 10(10)
Because of their full compatibility with the modern Si-based technology, the HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::abd413330310398421369ae92082d4e5
https://pubmed.ncbi.nlm.nih.gov/29464951
https://pubmed.ncbi.nlm.nih.gov/29464951
Autor:
Sergey Zakharchenko, Roman V. Kirtaev, Andrey Zenkevich, Alena Fetisova, D. V. Negrov, Yury Matveyev
Publikováno v:
Nanoscale Research Letters
Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fdc7af96722bb8414e233ff4e4eb1e4
http://europepmc.org/articles/PMC4792835
http://europepmc.org/articles/PMC4792835
Autor:
Anna Dunaeva, Dmitri Oussoltsev, Wei Zheng, Michael F. Rainbolt, Brian D. Clark, Sergey Zakharchenko
Publikováno v:
Day 1 Mon, September 28, 2015.
The Cottage Grove formation is an active U.S. mid-continent play where cemented horizontal wells are traditionally stimulated by fracturing several perforation clusters simultaneously using limited entry “perf and plug” or other multi-stage compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e32925bd3823fd1f41c8864db963cb11
https://doi.org/10.2118/174982-ms
https://doi.org/10.2118/174982-ms