Zobrazeno 1 - 7 of 7 pro vyhledávání: '"Sergey Yatsunenko"'
1
Diffractive Optics for GaN Terahertz Detectors Arrays
Autor: Grzegorz Cywiński, A. Nowakowska-Siwinska, Maciej Sypek, Dmytro B. But, Przemyslaw Zagrajek, Wojciech Knap, K. Szkudlarek, Agnieszka Siemion, I. Yahniuk, Dominique Coquillat, Jarosław Suszek, Sergey Yatsunenko
Publikováno v: 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON)
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), Apr 2017, Poland, France. pp.1
HAL
Fabrication and experimental tests of materials and optics for Terahertz range used in field effect transistor detectors arrays are described. The method using diffractive optics, fabricated in 3D printing technology, was used for tests with GaN/AIGa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48c9235633012e611097e08d1e83b6a9
https://hal.archives-ouvertes.fr/hal-01436892
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2
Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays
Autor: I. Yahniuk, Sergey Yatsunenko, K. Szkudlarek, Czeslaw Skierbiszewski, Jarosław Suszek, Dominique Coquillat, A. Nowakowska-Siwinska, Dmytro B. But, Przemyslaw Zagrajek, Grzegorz Cywiński, K. Węgrzyńska, A. Feduniewicz-Żmuda, Maciej Sypek, M. Rachon, Wojciech Knap
Publikováno v: Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2016, 24 (18), pp.20119-20131. ⟨10.1364/OE.24.020119⟩
International audience; We present the concept, the fabrication processes and the experimental results for materials and optics that can be used for terahertz field-effect transistor detector focal plane arrays. More specifically, we propose 3D print
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::432f3ec58019f57c7b87c5fd0473a611
https://hal.archives-ouvertes.fr/hal-01406354
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3
GaN/AlGaN based transistors for terahertz emitters and detectors
Autor: Grzegorz Cywinski, Krzesimir Szkudlarek, Ivan Yahniuk, Sergey Yatsunenko, Marcin Siekacz, Czeslaw Skierbiszewski, Wojciech Knap, Dmytro B. But, Dominique Coquillat, Nina Dyakonova
Publikováno v: 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/AlGaN High Electron Mobility Transistor (HEMT) structures for fabrication of detectors and emitters operating in THz spectral range. These devices are
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96e6ca4c30ba705642bb0159cddf0287
https://doi.org/10.1109/mikon.2016.7492076
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4
Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
Autor: K. Szkudlarek, I. Yahniuk, Grzegorz Muziol, Sergey Yatsunenko, P. Kruszewski, Grzegorz Cywiński, Czeslaw Skierbiszewski, Wojciech Knap, Sergey Rumyantsev
Publikováno v: Applied Physics Letters. 109:033502
Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a992d6d926851909794c52193395c7b
https://doi.org/10.1063/1.4958857
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5
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
Autor: Wojciech Knap, Czeslaw Skierbiszewski, I. Yahniuk, Grzegorz Muziol, Marcin Siekacz, K. Szkudlarek, Sergey L. Rumyantsev, Sergey Yatsunenko, Grzegorz Cywiński, P. Kruszewski
Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:02L118
The authors report the results of studies of lateral and vertical Schottky barrier diodes (SBD) based on molecular beam epitaxy (MBE) grown GaN/AlGaN heterostructures with two dimensional electron gas (2DEG) present at the heterostructure interface.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0dbe18e002e05546d282a5f673b63264
https://doi.org/10.1116/1.4944320
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6
Terahertz Imaging by Field Effect Transistors
Autor: Grzegorz Cywiński, Wojciech Knap, Jarosław Suszek, Dominique Coquillat, K. Szkudlarek, Frederic Teppe, Sergey Yatsunenko, I. Yahniuk, Nina Dyakonova, Dmytro B. But, Maciej Sypek
Publikováno v: HAL
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON)
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), Apr 2016, Cracovie, Poland. pp.1
An overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. As a conclusion, we will show one
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbb57898fa90366b0f153faf1606254b
https://hal.science/hal-01436049
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