Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sergey V. Svechnikov"'
Autor:
Evgenie F. Venger, Sergey A. Kostyukevych, Sergey V. Svechnikov, Peter E. Shepeliavii, Nadya L. Moskalenko, Alexander V. Stronski, Miroslav Vlcek
Publikováno v:
Selected Papers from Fifth International Conference on Correlation Optics.
The present paper is concerned with the investigation of imaging properties of As-S-Se media in application for fabrication of holographic optical security elements. Structural changes in such medica under the influence of external factors (exposure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d81c8909db5cd3e2585fcde2df0a0b2
https://doi.org/10.1117/12.455188
https://doi.org/10.1117/12.455188
Autor:
Sergey V. Svechnikov, E. B. Kaganovich
Publikováno v:
SPIE Proceedings.
Following the recent study on optical characterization and applications of porous silicon, this report provides a review of our research and development of visible luminescent Si nanocrystals with goal to extend functions of Si based materials. We pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c344df38433848ba5cb4d1bc911ac99b
https://doi.org/10.1117/12.306209
https://doi.org/10.1117/12.306209
Publikováno v:
SPIE Proceedings.
Optical properties of films obtained by reactive pulse laser deposition of monocrystalline Si have been studied. Transmissivity and reflectivity of these films were measured and used for calculation of their optical constants spectra. The dependencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a889ee1ad5803c97c6683e435cacc1df
https://doi.org/10.1117/12.306192
https://doi.org/10.1117/12.306192
Autor:
Sergey V. Svechnikov, Viktor V. Milenin, Evgenie F. Venger, Mihail V. Sheveljev, Irene B. Ermolovich, Raisa V. Konakova
Publikováno v:
SPIE Proceedings.
Results of investigations of magnetron and hyrotron irradiations effects on spectra of local states to be formed by intrinsic and impurity point structure defects in near surface layers of GaAs:Sn (111), GaAs:Sn (100), GaAs:Te (111) and InP (100) hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026dea27acd35af8c3e18550a770b033
https://doi.org/10.1117/12.306225
https://doi.org/10.1117/12.306225
Publikováno v:
SPIE Proceedings.
One of possible attempt to get light emission out of silicon is to use low dimensional Si structures. There we report about nanocrystalline composite Si films with visible photoluminescence prepared by reactive pulsed laser deposition. We have examin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974a1e48bcdbc0f044d92e09fb323d9d
https://doi.org/10.1117/12.280433
https://doi.org/10.1117/12.280433
Publikováno v:
SPIE Proceedings.
Here we report the results of working out an original, simple in control and not requiring expensive equipment MOCVD-method for depositing films of semiconductor compounds A2B6. Dithiocarbamates (DTC) are used as starting materials. The compounds are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1191eb353f6911d6fa4d3aeb42285b18
https://doi.org/10.1117/12.271194
https://doi.org/10.1117/12.271194
Autor:
A. V. Savchuk, T. A. Sergan, Marat S. Soskin, E. B. Kaganovich, E. N. Sal'kova, E. G. Manoilov, Sergey V. Svechnikov
Publikováno v:
SPIE Proceedings.
There were developed and studied new irreversible storage media based on the anodically etched and oxidized porous silicon and on nanocrystalline composite silicon films prepared by reactive pulsed laser deposition for pulsed laser recording for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d28d622ef2b20cee42e9ce41737e87
https://doi.org/10.1117/12.267701
https://doi.org/10.1117/12.267701
Publikováno v:
SPIE Proceedings.
Studies of both superclean silicon wafer surface and subsurface layer have shown high informative possibilities of the light scattering method. It was found that measurements of light scattering indicatrix vs azimuth make it possible to fix the occur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6349a8c4693df0b7d9cd4fb3fb13c8ac
https://doi.org/10.1117/12.191991
https://doi.org/10.1117/12.191991
Autor:
Sergey V. Svechnikov
Publikováno v:
SPIE Proceedings.
Non-traditional materials for solid-state electronics such as porous silicon, perovskites, electrides, conducting polymers whose structure imperfections and peculiar features of the structure are responsible for their unusual properties, are consider
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda9f60ee6fb0970ea9bfa7e66da9bd4
https://doi.org/10.1117/12.156971
https://doi.org/10.1117/12.156971