Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Sergey V. Rylov"'
Autor:
Sergey V. Rylov
Publikováno v:
IEEE Transactions on Applied Superconductivity. 29:1-5
We have introduced a new class of dc-powered Single Flux Quantum (SFQ) logic that uses dynamic (self-resetting) internal states to achieve completely clock-free gate operation and provide high immunity to input data skew. We call it DSFQ (dynamic SFQ
Autor:
Seongwon Kim, Jonathan E. Proesel, Sungjae Lee, Timothy O. Dickson, John F. Bulzacchelli, Mounir Meghelli, Zeynep Toprak-Deniz, Ilter Ozkaya, Herschel A. Ainspan, Alessandro Cevrero, Sergey V. Rylov, Daniel M. Kuchta
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:1214-1226
This paper presents a 32 Gb/s non-return-to-zero optical link using 850-nm vertical-cavity surface-emitting laser-based multi-mode optics with 14-nm bulk FinFET CMOS circuits. The target application is the integration of optics on to the first-level
Autor:
Benjamin G. Lee, Jonathan E. Proesel, Sergey V. Rylov, Christian W. Baks, Clint L. Schow, Abhijeet Ardey, Michael P. Beakes, Alexander V. Rylyakov, Ben Parker, Mounir Meghelli, John F. Bulzacchelli
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:3120-3132
We report a dc-coupled burst-mode (BM) receiver for optical links in a dynamically reconfigurable network. Through the introduction of interlocking search algorithms, a robust 25 Gb/s BM operation is achieved with 31 ns lock time. At the beginning of
Autor:
Christian W. Baks, Sergey V. Rylov, Daniel J. Friedman, Herschel A. Ainspan, Timothy O. Dickson, Michael P. Beakes, Ping-Hsuan Hsieh, Jose A. Tierno, Ankur Agrawal, Young H. Kwark, Seongwon Kim, Lei Shan, Mark Ferriss, Alexander V. Rylyakov, Yong Liu, John F. Bulzacchelli, Benjamin D. Parker
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1917-1931
A power-scalable 2 Byte I/O operating at 12 Gb/s per lane is reported. The source-synchronous I/O includes controllable TX driver amplitude, flexible RX equalization, and multiple deskew modes. This allows power reduction when operating over low-loss
Autor:
Robert Callan, Thomas Morf, Herschel A. Ainspan, D. Furrer, Andrea Prati, Ping-Hsuan Hsieh, P. Buchmann, William R. Kelly, Daniel J. Friedman, David R. Hanson, Jon D. Garlett, Juergen Hertle, Daniel W. Storaska, J. A. Sorice, R. Kelkar, Matthias Brandli, Thomas Toifl, V. Sharma, Marcel Kossel, Daniele Gardellini, G. A. Ritter, John F. Bulzacchelli, Christian Menolfi, Troy J. Beukema, Sergey V. Rylov, L. R. Chieco
Publikováno v:
ISSCC
This paper presents a 28-Gb/s transceiver in 32-nm SOI CMOS technology for chip-to-chip communications over high-loss electrical channels such as backplanes. The equalization needed for such applications is provided by a 4-tap baud-spaced feed-forwar
Autor:
Michael P. Beakes, Troy J. Beukema, Ankur Agrawal, Benjamin D. Parker, Peter Buchmann, Sergey V. Rylov, Mounir Meghelli, Yong Liu, Alexander V. Rylyakov, Zeynep Toprak-Deniz, Thomas Toifl
Publikováno v:
ISSCC
As CMOS devices continue to scale down in voltage and area, digital-based high-speed serial I/Os [1] become increasingly competitive with analog-based designs [2,3]. In addition to offering the PVT-independent performance of digital functions and sup
Autor:
Michael Wielgos, Sergey V. Rylov, Jieming Qi, Gautam Gangasani, Joseph Natonio, Jon D. Garlett, Todd M. Rasmus, Michael A. Sorna, William R. Kelly, Troy J. Beukema, John F. Bulzacchelli, Jong-Ru Guo, Michael J. Shannon, Mounir Meghelli, David A. Freitas, Chun-Ming Hsu, Hui H. Xu
Publikováno v:
CICC
This paper presents a 16-Gb/s 45-nm SOI CMOS transceiver for multi-standard backplane applications. The receiver uses a 12-tap DFE with circuit refinements for supporting higher data rates. Both the receiver and the transmitter use dynamic adaptation
Autor:
Yong Liu, John U. Knickerbocker, Xiaoxiong Gu, Paul S. Andry, Cornelia K. Tsang, Bing Dang, John F. Bulzacchelli, Daniel J. Friedman, Sergey V. Rylov, Herschel A. Ainspan, Benjamin D. Parker, Lavanya Turlapati, Timothy O. Dickson, Michael P. Beakes
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:884-896
A source synchronous I/O system based on high-density silicon carrier interconnects is introduced. Benefiting from the advantages of advanced silicon packaging technologies, the system uses 50 μm-pitch μC4s to reduce I/O cell size and fine-pitch in
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 18:1043-1056
A high-throughput low-latency digital finite impulse response (FIR) filter has been designed for use in partial-response maximum-likelihood (PRML) read channels of modern disk drives. The filter is a hybrid synchronous-asynchronous design. The speed-
Publikováno v:
IEEE Transactions on Applied Superconductivity. 19:1026-1033
In a superconductor digital-RF transmitter, the power amplifier chain can be implemented in hybrid temperature, hybrid technology environment, where the superconductor switching amplifier forms the first stage of the amplification chain. We have desi