Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sergey Slipchenko"'
Autor:
Yulia Kirichenko (Bobretsova), Dmitriy Veselov, Alexander Klimov, Sergey Slipchenko, Natalia Shuvalova, Andrey Lyutetsky, Nikita Pikhtin, Alexander Marmalyuk, Vladimir Svetogorov, Yuriy Ryaboshtan, Maksim Ladugin
Publikováno v:
Nanomaterials, Vol 13, Iss 20, p 2746 (2023)
A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and sp
Externí odkaz:
https://doaj.org/article/ac6927ab2e574d649d6b7de2c1a6b49b
Autor:
Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Ilya Shashkin, Nikita Pikhtin
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2386 (2023)
We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). S
Externí odkaz:
https://doaj.org/article/f8c24fc2fabd42b290c148ac316b3ccc
Autor:
Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Ilya Soshnikov, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Artem Rizaev, Nikita Pikhtin, Peter Kop’ev
Publikováno v:
Technologies, Vol 11, Iss 4, p 89 (2023)
AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of A
Externí odkaz:
https://doaj.org/article/07162cfb80394cee9167b8acaec9e1e7
Autor:
Evgeniia Cherotchenko, Vladislav Dudelev, Dmitry Mikhailov, Grigorii Savchenko, Dmitriy Chistyakov, Sergey Losev, Andrey Babichev, Andrey Gladyshev, Innokentiy Novikov, Andrey Lutetskiy, Dmitry Veselov, Sergey Slipchenko, Dmitry Denisov, Andrey Andreev, Irina Yarotskaya, Konstantin Podgaetskiy, Maksim Ladugin, Aleksandr Marmalyuk, Nikita Pikhtin, Leonid Karachinsky, Vladimir Kuchinskii, Anton Egorov, Grigorii Sokolovskii
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3971 (2022)
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the results of power and efficiency measurements for three different designs of quantum cascade lasers with a record-high peak power in the 8 μm spectral re
Externí odkaz:
https://doaj.org/article/40edd97cba934e4eae0dc0e908d3d5db
Autor:
Viktor Shamakhov, Dmitriy Nikolaev, Sergey Slipchenko, Evgenii Fomin, Alexander Smirnov, Ilya Eliseyev, Nikita Pikhtin, Peter Kop`ev
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 11 (2020)
Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells
Externí odkaz:
https://doaj.org/article/eda89ea5d45e49edb27208d293db507a
Autor:
Kop’ev, Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Ilya Soshnikov, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Artem Rizaev, Nikita Pikhtin, Peter
Publikováno v:
Technologies; Volume 11; Issue 4; Pages: 89
AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::3c72864067e3e00573a6b554fd9be5f1
Autor:
Sergey Slipchenko, Ilya Shashkin, Dmitriy Nikolayev, Viktor Shamakhov, Aleksandr Podoskin, Olga Soboleva, Kirill Bakhvalov, Vladislav Kriychkov, Nikita Pikhtin, Petr Kop’ev
Publikováno v:
Optics Letters. 48:203
An approach aimed at increasing the radiative efficiency in heterostructures operating in a single vertical mode at 1060 nm has been studied. Two types of heterostructures—the STJH (single tunnel junction heterostructure) and DTJH (double tunnel ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d32edf2df2897a49a01f2d400505cb1
https://doi.org/10.1364/ol.476248
https://doi.org/10.1364/ol.476248
Autor:
Sergey Slipchenko, Viktor Shamakhov, Dmitriy Nikolaev, Evgenii Fomin, Ilya Soshnikov, Alexsandr Bondarev, Maksim Mitrofanov, Nikita Pikhtin, Peter Kop‘ev
Publikováno v:
Applied Surface Science. 588:152991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b162ac3fa6092bb02466837d375bba2
https://doi.org/10.1016/j.apsusc.2022.152991
https://doi.org/10.1016/j.apsusc.2022.152991