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pro vyhledávání: '"Sergey Shvedov"'
Publikováno v:
EWDTS
Results of the computer simulation of the manufacturing process formation of the bipolar transistor with insulated gate (IGBT) on the base of technology “Silicon on insulator” (SOI) are presented. Current-voltage characteristics of the investigat
Autor:
Vladislav Nelayev, Viktor Stempitsky, Sergey Shvedov, Arkady Turtsevich, Anatoly Belous, Tran Tuan Trung
Publikováno v:
EWDTS
New contribution to the methodology for simulation of Deep SubMicron (DSM), nanometer-scale Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) features is proposed. The discussed approach is based on the use of traditional “compact” submi