Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Sergey P. Timoshenkov"'
Autor:
Victor S. Minaev, Nikolai M. Parfenov, Sergey P. Timoshenkov, Victor V. Kalugin, Ludmila P. Batyunya, Damir Zh. Mukimov
Publikováno v:
Modern Electronic Materials, Vol 1, Iss 4, Pp 97-102 (2015)
Based on the concept of polymeric–polymorphous structure of glass and glass-forming liquid experimental data have been analyzed revealing the nature of glass aging. We show that the glass forming substance is a copolymer consisting of structural na
Externí odkaz:
https://doaj.org/article/0d3b117544254a2da13e16046de4ede2
Publikováno v:
Nexo Revista Científica. 34:1461-1476
La integración de dispositivos ópticos en microelectrónica es muy atractiva para desarrollar subminiaturización continua y aumentar la velocidad de transmisión de datos. Por lo tanto aquí se tiene por objetivo presentar y explorar todas las opo
Publikováno v:
Russian Microelectronics. 49:489-493
The design and technology of solder and adhesive bonds, as well as the elastic strength and plastic properties of the materials of a Si crystal, solder, and glue joint, are the most significant factors characterizing the reliability and durability of
Publikováno v:
Proceedings of Universities. Electronics. 25:440-451
In microelectromechanical devices and systems (MEMS), capacitive micromechanical accelerometers (MMA) are used in airbag systems, machine vibration monitoring, navigation, seismology, microgravity measurements, etc. The most important structural elem
Publikováno v:
Proceedings of Universities. Electronics. 25:155-166
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Publikováno v:
Russian Microelectronics. 48:485-489
A micromechanical accelerometer (MMA) is used to measure the acceleration based on the change in frequency of the resonator when the acceleration is caused by the displacement of the inertial mass. Its sensitivity can be influenced by factors such as
Publikováno v:
Semiconductors. 53:2016-2023
The complexity of optimizing the technology of heteroepitaxy is an important limiting factor of the application of silicon-on-sapphire (SOS) structures. In order to eliminate this technological barrier, we study the gas-phase formation of the initial
Publikováno v:
Proceedings of Universities. Electronics. 24:565-572