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Autor:
Sergey O. Safonov, Veniamin G. Stakhin, Igor A. Kharitonov, Konstantin O. Petrosyants, Sergey V. Lebedev, Lev M. Sambursky
Publikováno v:
Microelectronics Reliability. 79:416-425
I-V characteristics and reliability parameters for the set of hardened SOI MOSFET's with special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range u