Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sergey Khristo"'
Autor:
Neta Shomrat, Konstantin Chirko, Inbal Weisbord, Yan Avniel, Sergey Khristo, David Nessim, Alon Litman, Tamar Segal-Peretz
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b142b08da37a5765fab98436114643
https://doi.org/10.1117/1.jmm.21.2.021202
https://doi.org/10.1117/1.jmm.21.2.021202
Publikováno v:
SPIE Proceedings.
Advanced SEM simulation has become a key element in the ability of SEM inspection, metrology and defect review to meet the challenges of advanced technologies. It grants additional capabilities to the end user, such as 3D height measurements, accurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaba59a5af97d6847fc38ee833b95b52
https://doi.org/10.1117/12.2049337
https://doi.org/10.1117/12.2049337
Autor:
Ran Brikman, Nir Shoshani, Shmoolik Mangan, Lior Shoval, Ishai Schwarzband, Vivek Balasubramanian, Sergey Khristo, Shay Goldstein
Publikováno v:
SPIE Proceedings.
Ever since the 180nm technology node the semiconductor industry has been battling the sub-wavelength regime in optical lithography. During the same time development for a 13.5nm Extreme Ultraviolet [EUV] solution has been in development, which would
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef349982099429c615c6469ae1241c3
https://doi.org/10.1117/12.927634
https://doi.org/10.1117/12.927634
Publikováno v:
SPIE Proceedings.
Advanced immersion lithography is enabled by a combination of optimized off-axis illumination, highly complex design patterns, and photo-mask technologies with several transmission and phase levels. The pattern on the mask, for 45nm half pitch and be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c7206d07df75bc9c82240f2e79b31a
https://doi.org/10.1117/12.829635
https://doi.org/10.1117/12.829635
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The difficulties encountered during lithography of state-of-the-art 2D patterns are formidable, and originate from the fact that deep sub-wavelength features are being printed. This results in a practical limit of k 1 ≥0.4 as well as a multitude of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f0f98fc767da5c0b8c84b093dd3d553
https://doi.org/10.1117/12.814282
https://doi.org/10.1117/12.814282