Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sergey G. Simakin"'
Autor:
Vladimir P. Popov, Fedor V. Tikhonenko, Valentin A. Antonov, Ida E. Tyschenko, Andrey V. Miakonkikh, Sergey G. Simakin, Konstantin V. Rudenko
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 291 (2021)
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O3/HfO2
Externí odkaz:
https://doaj.org/article/6b918bbffc3c4ae8a673b38a461c32e6
Autor:
A. E. Rogozhin, Andrey V. Miakonkikh, Sergey G. Simakin, Konstantin V. Rudenko, Elizaveta Smirnova, Andrey A. Lomov
Publikováno v:
Coatings
Volume 11
Issue 2
Coatings, Vol 11, Iss 117, p 117 (2021)
Volume 11
Issue 2
Coatings, Vol 11, Iss 117, p 117 (2021)
Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fce00e18d3acd25285ee837b914f4da8
Autor:
Ida E. Tyschenko, Konstantin V. Rudenko, Vladimir Popov, Fedor V. Tikhonenko, Sergey G. Simakin, Andrey V. Miakonkikh, Valentin Antonov
Publikováno v:
Nanomaterials, Vol 11, Iss 291, p 291 (2021)
Nanomaterials
Volume 11
Issue 2
Nanomaterials
Volume 11
Issue 2
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The &ldquo
diode-like&rdquo
currents through the symmetric atomic layer deposited (ALD)
diode-like&rdquo
currents through the symmetric atomic layer deposited (ALD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1d8fc054d2453aa9fa75ac23221a0bb
https://www.mdpi.com/2079-4991/11/2/291
https://www.mdpi.com/2079-4991/11/2/291
Autor:
Fedor V. Tikhonenko, Konstantin V. Rudenko, Vladimir Popov, Sergey G. Simakin, Vladimir F. Lukichev, Andrey V. Miakonkikh, Valentin Antonov
Publikováno v:
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Using low-k oxide silica based dielectrics is the usual approach to diminish signal interconnections in VLSI CMOS ICs. To decrease this effect in SOI ICs, a high resistivity silicon substrate with a trap-rich (HR-TR) layer is used. We study the prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c04e6d38dac5056c239e5f4657c8422b
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365284
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365284
Autor:
Konstantin V. Rudenko, Sergey Tarkov, Fedor V. Tikhonenko, Valentin Antonov, Vladimir Popov, Ida E. Tyschenko, Sergey G. Simakin
Publikováno v:
physica status solidi (a). 218:2100109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4f3f2b41fb3d96d828dddf218e389c
https://doi.org/10.1002/pssa.202100109
https://doi.org/10.1002/pssa.202100109
Autor:
T. V. Kaulina, Sergey G. Simakin, Elena N. Lepekhina, L. M. Natapov, Konstantin V. Van, A. N. Konilov, Michael V. Mints, K. A. Dokukina, Elena Belousova
Publikováno v:
Gondwana Research. 25:585-613
The Belomorian eclogite province was repeatedly affected by multiple deformation episodes and metamorphism under moderate to high pressure. Within the Gridino area, high pressure processes developed in a continental crust of tonalite–trondhjemite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::386b2b3219088311034fea7bb4a2812e
https://doi.org/10.1016/j.gr.2013.02.014
https://doi.org/10.1016/j.gr.2013.02.014
Autor:
Vladimir A. Krupenin, Artem S. Trifonov, Denis E. Presnov, A. V. Miakonkikh, Sergey G. Simakin, I. V. Bozhev
Publikováno v:
Journal of Applied Physics. 123:054503
We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7917d23de032218127d5bdac18e82fab
https://doi.org/10.1063/1.5019250
https://doi.org/10.1063/1.5019250