Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sergey D. Fedotov"'
Autor:
Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N. Statsenko
Publikováno v:
Materials, Vol 16, Iss 12, p 4265 (2023)
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Externí odkaz:
https://doaj.org/article/4d5c1f60bbad42e9893832605379ce86
Autor:
Statsenko, Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N.
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4265
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::b9660bf94d48c0a426f2b2c9243ea7e2