Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sergey Blokhin"'
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter Bimberg
Publikováno v:
Photonics, Vol 10, Iss 6, p 660 (2023)
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf
Externí odkaz:
https://doaj.org/article/61581f9d1e4c403caf1aecb6d21f2689
Autor:
Andrey Babichev, Sergey Blokhin, Evgenii Kolodeznyi, Leonid Karachinsky, Innokenty Novikov, Anton Egorov, Si-Cong Tian, Dieter Bimberg
Publikováno v:
Photonics, Vol 10, Iss 3, p 268 (2023)
Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present an inexpensive alternative to DFB-lasers for data communication in next-generation giga data centers, where optical links with large transmission distances are
Externí odkaz:
https://doaj.org/article/82b59beaef6b445ab5fdc458720610a9
Autor:
Sergey Blokhin, Andrey Babichev, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Stanislav Rochas, Dmitrii Denisov, Kirill Voropaev, Alexander Ionov, Nikolay Ledentsov, Anton Egorov
Publikováno v:
Electronics Letters, Vol 57, Iss 18, Pp 697-698 (2021)
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel j
Externí odkaz:
https://doaj.org/article/3a12465c1f87409288f7b2d16f15df02
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Evgenii Kolodeznyi, Dmitrii Denisov, Natalia Kryzhanovskaya, Kirill Voropaev, Victor Ustinov, Anton Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, Dieter Bimberg
Publikováno v:
IEEE Photonics Technology Letters. 35:297-300
Autor:
Bimberg, Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter
Publikováno v:
Photonics; Volume 10; Issue 6; Pages: 660
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf
Autor:
Natalia V. Kryzhanovskaya, Eduard Moiseev, Fedor Zubov, Mikhail Maximov, Sergey Blokhin, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Nikolay Ledentsov, Alexey Zhukov
Publikováno v:
Semiconductor Lasers and Laser Dynamics IX.
We show that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth. A maximum 3-dB modulation frequency of about 6 GHz was found. The K-limited maximal frequency of 13 GHz was estimated
Publikováno v:
Medical news of the North Caucasus. 8