Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sergey B. Borzakov"'
Autor:
N.I. Balalykin, Angela Kleinová, L. Hrubčín, Mária Sekáčová, Alexander P. Kobzev, Pavol Boháček, Jozef Huran, Sergey B. Borzakov, Valery Shvetsov
Publikováno v:
physica status solidi (a). 210:2756-2761
Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma-enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5d97c49d7570e82dcd0aca7611e6d8
https://doi.org/10.1002/pssa.201330248
https://doi.org/10.1002/pssa.201330248
Autor:
Vlasta Sasinková, Pavol Boháček, Angela Kleinová, Valery Shvetsov, J Arbet, A. Valovič, Sergey B. Borzakov, Jozef Huran, Alexander P. Kobzev, Mária Sekáčová
Publikováno v:
Applied Surface Science. 269:88-91
Amorphous silicon carbide (a-SiC) is an excellent alternative passivation layer material for silicon solar cells especially working in hard and space environment. Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) layers were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a97e5fdc839bc9004ea987048e7bd1
https://doi.org/10.1016/j.apsusc.2012.10.162
https://doi.org/10.1016/j.apsusc.2012.10.162
Autor:
Angela Kleinová, Sergey B. Borzakov, L. Hrubčín, Jozef Huran, Vladimir A. Skuratov, Pavel Boháček, Vlasta Sasinková, Alexander P. Kobzev
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e14b0eea52cfff5c741a39f18cd7a308
http://www.scopus.com/inward/record.url?eid=2-s2.0-85057760854&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85057760854&partnerID=MN8TOARS
