Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Sergey A. Reshanov"'
Autor:
Victor V. Luchinin, Adolf Schöner, Alexey V. Afanasyev, Vladimir A. Ilyin, Sergey A. Reshanov, Aleksey I. Mikhaylov
Publikováno v:
Semiconductors. 54:122-126
A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b58ba5cc1eba86a15005ba8fa6159c
https://doi.org/10.1134/s1063782620010157
https://doi.org/10.1134/s1063782620010157
Autor:
Victor V. Luchinin, Vladimir A. Ilyin, K. Sergushichev, Boris Ivanov, Adolf Schöner, Yuri S. Demin, Artem A. Smirnov, Sergey A. Reshanov, Alexey F. Kardo-Sysoev, Alexey V. Afanasyev
Publikováno v:
Materials Science Forum. 924:841-844
The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba43bb08a82939c8d8f4dea369385d1
https://doi.org/10.4028/www.scientific.net/msf.924.841
https://doi.org/10.4028/www.scientific.net/msf.924.841
Autor:
H. Elahipanah, Sergey A. Reshanov, Wlodek Kaplan, Nicolas Thierry-Jebali, Jang-Kwon Lim, Adolf Schöner, Andy Zhang, Mietek Bakowski, Mikael Östling
Publikováno v:
Materials Science Forum. 897:455-458
1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85142ea88bcffbc1e09a9911d58b91dd
https://doi.org/10.4028/www.scientific.net/msf.897.455
https://doi.org/10.4028/www.scientific.net/msf.897.455
Autor:
A. A. Smimov, Vladimir A. Ilyin, Alexey V. Afanasyev, Victor V. Luchinin, Adolf Schöner, K. Sergushichev, Sergey A. Reshanov
Publikováno v:
Materials Science Forum. 897:614-617
4H-SiC UV-photodetectors based on full-epitaxial p +p-n+ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·1014 cm-2 . Current-voltage characteristics, life time of non-equilibrium charge carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5563b427743bf7bab281a8ee5260f93d
https://doi.org/10.4028/www.scientific.net/msf.897.614
https://doi.org/10.4028/www.scientific.net/msf.897.614
Autor:
Sergey A. Reshanov, Victor V. Luchinin, Vladimir A. Ilyin, Adolf Schöner, Aleksey I. Mikhaylov, Alexey V. Afanasyev
Publikováno v:
Semiconductors. 50:824-827
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5a419f9308bb1f0a5abcac70b616b4
https://doi.org/10.1134/s1063782616060178
https://doi.org/10.1134/s1063782616060178
Autor:
Alexander Bubendorf, Ernst Meyer, Adolf Schöner, Harald Rossmann, Urs Gysin, Andy Zhang, Thilo Glatzel, H. Bartolf, Sergey A. Reshanov, Thomas A. Jung
Publikováno v:
Materials Science Forum. 858:497-500
The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20058b42277e2336d930c3a3caeaf6c7
https://doi.org/10.4028/www.scientific.net/msf.858.497
https://doi.org/10.4028/www.scientific.net/msf.858.497
Autor:
Victor V. Luchinin, Giovanni Alfieri, Aleksey I. Mikhaylov, H. Bartolf, Lars Knoll, Alexey V. Afanasyev, Sergey A. Reshanov, Adolf Schöner, Renato Minamisawa
Publikováno v:
Materials Science Forum. 858:651-654
High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659ed0dcaffcfd9c3120dcf1fbfc845d
https://doi.org/10.4028/www.scientific.net/msf.858.651
https://doi.org/10.4028/www.scientific.net/msf.858.651
Autor:
Sergey A. Reshanov, Adolf Schöner, Vladimir A. Ilyin, Artem A. Smirnov, Victor V. Luchinin, Alexey F. Kardo-Sysoev, K. Sergushichev, Boris Ivanov, Alexey V. Afanasyev
Publikováno v:
Materials Science Forum. 858:786-789
The paper reports on the results of the studies of static and dynamic characteristics of 4H-SiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af9be960d6e7e3f4a0d16da6b460dac
https://doi.org/10.4028/www.scientific.net/msf.858.786
https://doi.org/10.4028/www.scientific.net/msf.858.786
Autor:
Urs Gysin, Adolf Schöner, Thomas Schmölzer, Ernst Meyer, Sergey A. Reshanov, Thilo Glatzel, H. Bartolf
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2485-2497 (2015)
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2485-2497 (2015)
Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5fd5208023e25d353d5b68b66ce7e59
https://doi.org/10.3762/bjnano.6.258
https://doi.org/10.3762/bjnano.6.258
Autor:
Thomas A. Jung, H. Bartolf, Urs Gysin, Thilo Glatzel, H.R. Rossmann, Sergey A. Reshanov, Adolf Schöner, Ernst Meyer
Publikováno v:
Microelectronic Engineering. 148:1-4
Display Omitted We discuss the concept of Junction Barrier Schottky diodes.We perform dopant imaging of implanted p+ regions.We perform numerical device simulations for application voltages of 3.3kV (traction). In order to avoid a premature breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7719ce08f32c2504b45bed81ea9bc411
https://doi.org/10.1016/j.mee.2015.04.011
https://doi.org/10.1016/j.mee.2015.04.011