Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Sergent, A. M."'
Publikováno v:
Phys. Rev. Lett. 99 236402 (2007)
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm$^{-2}$)
Externí odkaz:
http://arxiv.org/abs/0710.3542
Autor:
Manfra, M. J., de Picciotto, R., Jiang, Z., Simon, S. H., Pfeiffer, L. N., West, K. W., Sergent, A. M.
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for all tempe
Externí odkaz:
http://arxiv.org/abs/0704.2215
We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605155
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2 and nu=11/2 for temperatures below 150mK. In stark contrast, the transport at nu=9/2 is isotropic for all tempe
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603173
Autor:
Henriksen, E. A., Syed, S., Ahmadian, Y., Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Stormer, H. L.
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503638
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the HOMO-LUMO bandgap. It is found that these highly purified crystals possess band tails broader than those typically obser
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312722
We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metasta
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312721
Publikováno v:
Science, 1999 Mar . 283(5409), 1897-1900.
Externí odkaz:
https://www.jstor.org/stable/2896638
Autor:
Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J.
Publikováno v:
Journal of Applied Physics; 7/1/2002, Vol. 92 Issue 1, p338, 8p, 1 Black and White Photograph, 8 Graphs
Publikováno v:
Journal of Applied Physics; Aug1977, Vol. 48 Issue 8, p3580-3587, 8p