Výsledky vyhledávání - "Sergej Filonovich"

A Contactless Patterned Plasma Processing for Interdigitated Back Contact Silicon Heterojunction Solar Cells Fabrication

Autor: Erik Johnson, Junkang Wang, Fatima Ouadjane, José Alvarez, D. Daineka, Borja Carbonell, Pere Roca i Cabarrocas, Pavel Bulkin, Karim Ouaras, Sergej Filonovich, Monalisa Ghosh

Publikováno v: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).

We present results from the application of a novel, contactless patterning technique to form the doped fingers required for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells. The technique involves patterning the RF powered ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30f3d41482ae5bb24968f37c0e4f4367
https://doi.org/10.1109/pvsc43889.2021.9518831

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Area selective deposition of silicon by plasma enhanced chemical vapor deposition using a fluorinated precursor

Autor: Erik Johnson, Daniel Suchet, Sergej Filonovich, Ghewa Akiki, Pavel Bulkin, D. Daineka

Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2020, 531, pp.147305. ⟨10.1016/j.apsusc.2020.147305⟩

International audience; An Area Selective Deposition (ASD) process using Plasma-Enhanced Chemical Vapour Deposition (PECVD) is demonstrated. Using a plasma chemistry containing a fluorinated silicon precursor (SiF 4), no deposition is observed on an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887a1c850ba3718b0a640346eea2e4ea
https://hal.archives-ouvertes.fr/hal-03001811

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Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing

Autor: Joana Figueira, Tiago Mateus, Alexandra Rodrigues, Isabel M.P.L.V.O. Ferreira, Joana Loureiro, Patrick E. Hopkins, Marisa R. Ferreira, Brian F. Donovan, Sergej Filonovich

Publikováno v: Thin Solid Films

The influence of post-deposition thermal annealing on the thermoelectric properties of n- and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a83cf4c8e78af1c23fe128ce279fb323
https://doi.org/10.1016/j.tsf.2017.09.047

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Deleterious electrostatic interaction in silicon passivation stack between thin ALD Al2O3 and its a-SiNX:H capping layer: numerical and experimental evidences

Autor: Pavel Bulkin, Sergej Filonovich, Pere Roca i Cabarrocas, Raphaël Lachaume, François Silva, Erik Johnson, Fabien Lebreton

Publikováno v: Energy Procedia. 124:91-98

This study focuses on the electrostatic interaction between the ALD Al2O3 passivation layer and the PECVD a-SiNX:H capping layer, while reducing ALD Al2O3 thickness. The first one embeds negative fixed charges while the second is well known to posses

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b4e61b9e0ae3e2a41db51d4fdbf6cc4
https://doi.org/10.1016/j.egypro.2017.09.328

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Origin of area selective plasma enhanced chemical vapor deposition of microcrystalline silicon

Autor: Mathieu Frégnaux, Muriel Bouttemy, Ghewa Akiki, Sergej Filonovich, Erik Johnson, D. Daineka, Pavel Bulkin, Ileana Florea

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (1), pp.013201. ⟨10.1116/6.0000653⟩

International audience; Plasma Enhanced Chemical Vapor Deposition of silicon from SiF4/H2/Ar gas mixture is observed on a SiOxNy surface, while under the same plasma conditions, silicon films do not grow on AlOx nor Al surfaces. Transmission electron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f70cd24dc0ea60ac237ffb0b2191de6b
https://doi.org/10.1116/6.0000653

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Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formation

Autor: Joaquim P. Leitão, Hugo Águas, Tiago Mateus, António Vicente, Andriy Lyubchyk, Bruno P. Falcão, Rodrigo Martins, Manuel J. Mendes, Sergej Filonovich, Elvira Fortunato

Publikováno v: Thin Solid Films

The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the un

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::757628b5c4e4e3ae3e21e3244c4704d9
https://doi.org/10.1016/j.tsf.2015.08.016

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Hydrogenated nanocrystalline silicon thin films with promising thermoelectric properties

Autor: Joana Figueira, Isabel M.P.L.V.O. Ferreira, Joana Loureiro, Marisa R. Ferreira, Patrick E. Hopkins, Tiago Mateus, Alexandra Rodrigues, Sergej Filonovich, Brian F. Donovan

Publikováno v: Applied Physics A. 120:1497-1502

The search for materials with suitable thermoelectric properties that are environmentally friendly and abundant led us to investigate p- and n-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films, produced by plasma-enhanced chemical vapor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b151d729472c135431b02d03112b03f0
https://doi.org/10.1007/s00339-015-9343-5

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Blistering of Al2O3/a-SiNx:H stacks: analysis of the submerged part of the iceberg by colored picosecond acoustic microscopy

Autor: Pere Roca i Cabarrocas, Arnaud Devos, Sergej Filonovich, Fabien Lebreton, Etienne Drahi, Patricia de Coux, François Silva

Publikováno v: 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Blistering of Al2O3/SiNX:H stacks has been regularly reported over the last decade. Despite several studies, it has not been possible to link blistering density and lifetime degradation. In this work we demonstrate the use APiC technique to probe the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d89104d6b24bb3014eaea29ce8362d5
https://doi.org/10.1109/pvsc.2017.8366749

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