Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sergei Timoshnev"'
Autor:
Sergei Timoshnev, Alexey Kazakin, Ksenia Shubina, Valentina Andreeva, Elizaveta Fedorenko, Aleksandra Koroleva, Evgeniy Zhizhin, Olga Koval, Alina Kurinnaya, Alexander Shalin, Vjaceslavs Bobrovs, Yakov Enns
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 9, Pp n/a-n/a (2024)
Abstract Nickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on the method of growth and subsequent processing. Here the effects
Externí odkaz:
https://doaj.org/article/867660fc5139480fa147cbf788051caa
Publikováno v:
Semiconductors. 52:660-663
AbstractThe studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d5a3effe69b28282827efaea817edcc
https://doi.org/10.1134/s1063782618050342
https://doi.org/10.1134/s1063782618050342
Autor:
Ksenia Shubina, Farid Bayramov, Andrei Mizerov, Yury Rud, Sergei Timoshnev, Aleksei Bouravleuv, B. H. Bairamov, V. V. Toporov, Ekaterina Lubyankina
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 578:012046
Realization of epitaxial synthesis of high quality gallium nitride layers on silicon substrates is driven by the high potential of GaN-on-silicon technology for fabrication of high efficiency and relatively low-cost electronic devises. Growth process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08452a4c6532d7bb612aae63bb304cc4
https://doi.org/10.1088/1755-1315/578/1/012046
https://doi.org/10.1088/1755-1315/578/1/012046
Autor:
Sergei Timoshnev
Publikováno v:
CrossRef Listing of Deleted DOIs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f392c22b8a7d6718260a873d9f91ff6d
https://doi.org/10.1007/s11448-008-2010-8
https://doi.org/10.1007/s11448-008-2010-8