Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Sergei G. Buga"'
Autor:
Stepan V. Bolshedvorskii, Sergey A. Tarelkin, Vladimir V. Soshenko, Ivan S. Cojocaru, Olga R. Rubinas, Vadim N. Sorokin, Victor G. Vins, Andrey N. Smolyaninov, Sergei G. Buga, Artem S. Galkin, Taisiya E. Drozdova, Mikhail S. Kuznetsov, Sergei A. Nosukhin, Alexey V. Akimov
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eefce2ba49060e2648a92e02fa585a7
https://doi.org/10.1002/pssr.202200415
https://doi.org/10.1002/pssr.202200415
Autor:
Bernd Abel, Wolfgang Knolle, Andreas Pöppl, Pablo Esquinazi, Olesya Daikos, Tobias Lühmann, Robert Staacke, Sébastien Pezzagna, Jan Meijer, Annette Setzer, Tom Scherzer, Sergei G. Buga
Several diamond bulk crystals with a concentration of electrically neutral single substitutional nitrogen atoms of $\lesssim 80~$ppm, the so-called C- or P1-centres, were irradiated with electrons at 10 MeV energy and low fluence. The results show a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::272da0c4e99f253309cbc8f6e524552c
http://arxiv.org/abs/2108.13850
http://arxiv.org/abs/2108.13850
Autor:
N. V. Kornilov, V. S. Bormashov, Nikolay V. Luparev, M.S. Kuznetsov, Sergei G. Buga, A. P. Volkov, Vladimir Blank, S. A. Terent’ev, Anton V. Golovanov, S. A. Tarelkin, D. V. Teteruk
Publikováno v:
Inorganic Materials. 54:1469-1476
The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d5f8789af85a8fcbcf3a9e45c3c60e
https://doi.org/10.1134/s0020168518150037
https://doi.org/10.1134/s0020168518150037
Autor:
S.G. Pavlov, M.S. Kuznetsov, V. S. Bormashov, Heinz-Wilhelm Hübers, S. A. Nosukhin, Sergei G. Buga, D. D. Prikhodko, S. A. Tarelkin, S.A. Terentiev, Vladimir Blank
Publikováno v:
Diamond and Related Materials. 120:108629
Substitutional boron in diamond acts as an acceptor center with the ionization energy of about 372 meV. Unlike its analogues in elemental semiconductors (silicon, germanium), boron bound states are poorly described by the electronic mass approximatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfa018cf26004e440d46853debe8b2b5
https://doi.org/10.1016/j.diamond.2021.108629
https://doi.org/10.1016/j.diamond.2021.108629
Autor:
S.A. Terentiev, N. V. Kornilov, A. P. Volkov, V. S. Bormashov, M.S. Kuznetsov, Vladimir Blank, Sergei G. Buga, S. A. Tarelkin, D. V. Teteruk
Publikováno v:
Diamond and Related Materials. 75:78-84
We designed and made 15 μm large area vertical Schottky barrier diamond diodes with resulting substrate thickness of about 1 μm. The ion-beam assisted lift-off technique was successfully used to separate 5 × 5 mm 2 active two-layered structure fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2ee854e8ef5430db476c181d74b2db
https://doi.org/10.1016/j.diamond.2017.02.006
https://doi.org/10.1016/j.diamond.2017.02.006
Publikováno v:
Physics of the Solid State. 59:198-208
Molecular-dynamics simulation of the evolution of bipartite bimetallic clusters consisting of 390 atoms during bombardment by Arn (n = 1, 2, 13) clusters with initial energies from 1 eV to 1.4 keV is performed. Binary Cu–Au and Ni–Al clusters con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c65f48d0466912072f66074a684dce5e
https://doi.org/10.1134/s1063783417010292
https://doi.org/10.1134/s1063783417010292
Autor:
S.A. Terentiev, M.S. Kuznetsov, Anton V. Golovanov, S. A. Tarelkin, V. S. Bormashov, Sergei G. Buga, V.D. Blank, D. D. Prikhodko
Publikováno v:
Journal of Superhard Materials. 38:412-416
The heat capacity, Cp, of boron-doped single-crystal diamonds grown by the temperature gradient method was studied. The boron contents were < 1016, ~ 1018, and ~ 1020 cm–3. The heat capacity data for all tested crystals match well (within the measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0163dd3c48839246a747a4119f90aca9
https://doi.org/10.3103/s1063457616060058
https://doi.org/10.3103/s1063457616060058
Autor:
A. P. Volkov, M.S. Kuznetsov, Anton V. Golovanov, D. D. Prikhodko, S. A. Tarelkin, D. V. Teteruk, Sergei G. Buga, V. S. Bormashov
Publikováno v:
MRS Communications. 6:71-76
Thermal conductivity of single-crystal boron-doped diamond (BDD) was studied in comparison with high-quality pure I la-type diamond in the temperature range from 20 to 400 K. Boron content in BDD was about 1019 cnr3 that is a typical value of p+ subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab622e05e1e4d6a849898a541fb8a41e
https://doi.org/10.1557/mrc.2016.12
https://doi.org/10.1557/mrc.2016.12
Autor:
Anton V. Golovanov, Eugeniy Korostylev, M.S. Kuznetsov, S. A. Tarelkin, Sergey Yu. Troschiev, N. V. Kornilov, D. V. Teteruk, Sergei G. Buga, A. P. Volkov, D. D. Prikhodko, V. S. Bormashov
Publikováno v:
physica status solidi (a). 213:2492-2497
In order to improve the performance of betavoltaic converters based on synthetic IIb diamond Schottky structure, we performed comparative studies of converters with Al, Hf, Pt, and Au metals forming the Schottky barrier by means of the electron beam-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967efc9634fde5bda82f0e9803df4c91
https://doi.org/10.1002/pssa.201533060
https://doi.org/10.1002/pssa.201533060
Publikováno v:
Physics of the Solid State. 58:387-393
The evolution of bipartite bimetallic atomic clusters within 5 ps under bombardment with monoenergetic argon ions at the initial energy ranging from 1 eV to 1.4 keV has been simulated by the classical molecular dynamics method with a target obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a965fb3e64e0c9411c558d318cb4a32
https://doi.org/10.1134/s1063783416020281
https://doi.org/10.1134/s1063783416020281