Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Sergeh Vartanian"'
Publikováno v:
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f619ece373e45ede8068787c80e205b
https://doi.org/10.1109/redw56037.2022.9921679
https://doi.org/10.1109/redw56037.2022.9921679
Autor:
Sergeh Vartanian, Jean Yang-Scharlotta, Gregory R. Allen, Andrew C. Daniel, Frederick B. Mancoff, Daniel Symalla, Andy Olsen
Publikováno v:
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e499bb65e488f54e4518eec0f132e36
https://doi.org/10.1109/nsrec45046.2021.9679326
https://doi.org/10.1109/nsrec45046.2021.9679326
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
We present single event latchup (SEL) results for a variety of microelectronic devices frequently designated for SmallSat missions. The data presented is only a small representation of all the SEL tests performed in 2019.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f227f7a3978455075518b817e78f8d4
https://doi.org/10.1109/redw51883.2020.9325824
https://doi.org/10.1109/redw51883.2020.9325824
Publikováno v:
IEEE Transactions on Nuclear Science. 65:27-33
This paper reports the results of electron irradiations at various energies of the Samsung 8-Gb single-level cell nand flash memory. The percentage of bit errors from electron exposure is compared to results from 60Co total ionizing dose (TID) measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc4586f39f4056932e05fed40bbc03e
https://doi.org/10.1109/tns.2017.2767026
https://doi.org/10.1109/tns.2017.2767026
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74aeef122f4a85f8daf5ef2a45d08eb5
https://doi.org/10.1109/radecs47380.2019.9745649
https://doi.org/10.1109/radecs47380.2019.9745649
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
This paper reports recent single-event effects results for a variety of microelectronic devices that include ADC, DAC, DDS, MOSFET driver, analog switch, oscillator, and zero delay buffer. The data was collected to evaluate these devices for possible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa01ead582a2ff4a2f7e7c06f560fd6c
https://doi.org/10.1109/redw.2019.8906643
https://doi.org/10.1109/redw.2019.8906643
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
This paper presents recent heavy ion single-event effects test results for commercial off the shelf multi-channel digital to analog converter devices. Data was taken in CY18 for device evaluation for use in a NASA space observatory mission.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b562d63a10693fb72e0b84c947edd4
https://doi.org/10.1109/redw.2019.8906655
https://doi.org/10.1109/redw.2019.8906655
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We present SEE test results for the Cobham Space Wire transceiver after dosing the device to 300 krad(Si). We performed SEU characterization with variable data rates and patterns. Events resembling SEFIs were also observed and recorded.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e33f2dbb547109fa11fc2d106132f3
https://doi.org/10.1109/radecs45761.2018.9328695
https://doi.org/10.1109/radecs45761.2018.9328695
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
This paper reports recent single-event latchup results for a variety of microelectronic devices that include Wireless and Powerline Network Communication devices. The data were collected to evaluate these devices for possible use in NASA Mars mission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b08dcbc63b2564e0c300cb5d79eeeee
https://doi.org/10.1109/nsrec.2018.8584263
https://doi.org/10.1109/nsrec.2018.8584263
Autor:
Farokh Irom, Sergeh Vartanian, Leif Scheick, Gregory R. Allen, Larry D. Edmonds, S.S. McClure, Duc N. Nguyen, Kelly W. Stanford
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
We present total ionizing dose (TID) measurements of a commercial Samsung NAND flash memory intended for use on a high dose mission. Statistical variation in the first measurements necessitates a second set of measurements with an increased sample se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3fa829c27193a529738e90abc8fd86
https://doi.org/10.1109/nsrec.2018.8584288
https://doi.org/10.1109/nsrec.2018.8584288