Zobrazeno 1 - 10 of 46 pro vyhledávání: '"Serge Blonkowski"'
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La$_2$NiO$_{4+\delta}$ ‐based memristive devices integrated on Si‐based substrates
Autor: Thoai‐Khanh Khuu, Gauthier Lefèvre, Carmen Jiménez, Hervé Roussel, Adeel Riaz, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy, Mónica Burriel
Publikováno v: Advanced Materials Technologies
Advanced Materials Technologies, 2022, 2022, pp.2200329. ⟨10.1002/admt.202200329⟩
The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admt.202200329.; International audience; Valence change memories, in which internal redox reactions control the change in resistance are p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f0a46da2d70f4144a4ba1878cb3c05c
https://hal.science/hal-03764455
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3
Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology
Autor: Thierry Baron, D. Deleruyelle, P.V. Guenery, Serge Blonkowski, Abdelkader Souifi, L. Militaru, J. Moeyaert, Khaled Ayadi, E. A. Leon Perez, Nicolas Baboux
Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull sele
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::731be2b61c72b31c3e267217d1e297cc
https://hal.archives-ouvertes.fr/hal-03116248
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4
Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications
Autor: O. Cueto, Hervé Henry, T. Philippe, R. Bayle, Mathis Plapp, Serge Blonkowski
Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 128 (18), pp.185101. ⟨10.1063/5.0023692⟩
The ternary alloy of germanium, antimony, and tellurium (GST) is widely used as a material for phase-change memories. In particular, the stoichiometric compound Ge 2Sb 2Te 5 exhibits a rapid congruent crystallization. To increase the temperature at w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19f27551bf8b610a51aba860bdb483eb
https://hal.archives-ouvertes.fr/hal-03016048/document
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5
Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCM
Autor: Hervé Henry, T. Philippe, Serge Blonkowski, O. Cueto, Raphael Bayle, Mathis Plapp
Publikováno v: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required fo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a7b985bc1bbdc59c346573c7d0e27c5
https://doi.org/10.23919/sispad49475.2020.9241619
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6
Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory
Autor: Gauthier Lefevre, Tristan Dewolf, Nicolas Guillaume, Serge Blonkowski, Christelle Charpin-Nicolle, Eric Jalaguier, Etienne Nowak, Nicolas Bernier, Tom Blomberg, Marko Tuominen, Hessel Sprey, Guillaume Audoit, Sylvie Schamm-Chardon
Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2021, 130 (24), pp.244501. ⟨10.1063/5.0072343⟩
International audience; Metal oxide-based resistive random access memory devices are highly attractive candidates for next-generation nonvolatile memories, butthe resistive switching phenomena remain poorly understood. This article focuses on the mic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fc9c75e2904caa58ba963d3a81c7c11
https://doi.org/10.1063/5.0072343
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7
Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL
Autor: Thierry Baron, E. A. Leon Perez, J. Moeyaert, Serge Blonkowski, Nicolas Baboux, L. Militaru, Khaled Ayadi, S. Labau, Abdelkader Souifi, D. Deleruyelle, Pierre-Vincent Guenery
Publikováno v: IEEE
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
this work report on the integration of indium oxide (In2O3) nanocrystals (NCs) for Resistive Random Access Memory (RRAM) applications. The RRAM integration based on MOCVD and ALD depositions is fully compatible fabrication process with CMOS of back-e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10288e06c600adc86d13dca3c3d4f87c
https://hal.univ-grenoble-alpes.fr/hal-02330674
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9
Innovative GeS2/Sb2Te3 based phase change memory for low power applications
Autor: N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé
Publikováno v: NVMTS
In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the R
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::159552dbef9ecc060d8c36b0bd006c47
https://doi.org/10.1109/nvmts.2017.8171305
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10
Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches
Autor: Yann Beilliard, Serge Ecoffey, Abdelkader Souifi, Marina Labalette, Serge Blonkowski, Dominique Drouin, S. Jeannot
Publikováno v: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2017, 16 (5), pp.745-751. ⟨10.1109/TNANO.2017.2698205⟩
This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the wa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db0c91f25d4956757844b0f84e045438
https://hal.archives-ouvertes.fr/hal-01701505
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