Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Serene Lay Geok Ng"'
Autor:
Philippe Coquet, Jun Zhang, A. Olivier, Serene Lay Geok Ng, David Peyrot, Umar Saleem, Hong Wang
Publikováno v:
Journal of Crystal Growth. 439:28-32
We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68fa3a4aad14603461ffee50c6383e03
https://doi.org/10.1016/j.jcrysgro.2015.12.051
https://doi.org/10.1016/j.jcrysgro.2015.12.051
Publikováno v:
Journal of the American Ceramic Society. 93:3798-3802
Co-doped ZnO nanorods (Zn1−xCoxO) with x=0.05, 0.1, and 0.2 were successfully grown on indium-doped tin oxide glass substrates via a wet chemical route at 70°C for 10 h. The effect of Co-doping level on the morphology, crystalline phases, optical,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35db6bd162052dcc0f80a02a6c07cb6d
https://doi.org/10.1111/j.1551-2916.2010.03922.x
https://doi.org/10.1111/j.1551-2916.2010.03922.x
Publikováno v:
Journal of the American Ceramic Society. 92:1940-1945
Vertically aligned, single crystalline ZnO nanorods with a high packing density and diameter of ∼ 60 nm have been successfully synthesized via a low-temperature hydrothermal route on glass substrates pre-deposited with a ZnO seeding layer. The seed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b679ed352edd95ddbfca2780b61ea2
https://doi.org/10.1111/j.1551-2916.2009.03148.x
https://doi.org/10.1111/j.1551-2916.2009.03148.x
Autor:
Subramaniam Arulkumaran, Rong Ji, Hong Wang, Kian Siong Ang, Serene Lay Geok Ng, Yang Li, Geok Ing Ng, Gang Ye, Zhihong Liu
The effect of post-deposition annealing on chemical bonding states at interface between Al0.5Ga0.5N and ZrO2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::732224ed1564907123a56080fd4daf5d
https://hdl.handle.net/10356/107095
https://hdl.handle.net/10356/107095
Autor:
Hong Wang, Rong Ji, Subramaniam Arulkumaran, Serene Lay Geok Ng, Zhihong Liu, Yang Li, Kian Siong Ang, Geok Ing Ng, Gang Ye
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:05E117
Atomic layer deposition (ALD) of ZrO2 on native oxide covered (untreated) and buffered oxide etchant (BOE) treated AlGaN surface was analyzed by utilizing x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. Ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::585574cfd9a28c07841b4c5b7e5bb98e
https://doi.org/10.1116/1.4927164
https://doi.org/10.1116/1.4927164
Autor:
Subramaniam Arulkumaran, Zhihong Liu, Geok Ing Ng, Gang Ye, Rong Ji, Hong Wang, Yang Li, Serene Lay Geok Ng, Kian Siong Ang
Publikováno v:
Applied Physics Letters. 105:152104
Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d60ab97b018da33d91a99c738023d07c
https://doi.org/10.1063/1.4898577
https://doi.org/10.1063/1.4898577
Autor:
Gang Ye, Hong Wang, Serene Lay Geok Ng, Rong Ji, Arulkumaran, Subramaniam, Geok Ing Ng, Yang Li, Zhi Hong Liu, Kian Siong Ang
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Sep/Oct2015, Vol. 33 Issue 5, p1-4, 4p
Autor:
Gang Ye, Hong Wang, Serene Lay Geok Ng, Rong Ji, Arulkumaran, Subramaniam, Geok Ing Ng, Yang Li, Zhi Hong Liu, Kian Siong Ang
Publikováno v:
Applied Physics Letters; 3/2/2015, Vol. 106 Issue 9, p1-3, 3p, 1 Diagram, 3 Graphs
Autor:
Gang Ye, Hong Wang, Serene Lay Geok Ng, Rong Ji, Arulkumaran, Subramaniam, Geok Ing Ng, Yang Li, Zhi Hong Liu, Kian Siong Ang
Publikováno v:
Applied Physics Letters; 10/13/2014, Vol. 105 Issue 15, p1-3, 3p, 1 Black and White Photograph, 1 Diagram, 2 Graphs