Zobrazeno 1 - 10
of 151
pro vyhledávání: '"Serényi, P."'
Autor:
Mukherjee, Deshabrato, Kalas, Benjamin, Burger, Sven, Safran, Gyorgy, Serenyi, Miklos, Fried, Miklos, Petrik, Peter
Publikováno v:
Proc. SPIE Vol. 12428 (2023) 124280S
Spectroscopic ellipsometry is a sensitive and optical model-supported quantitative tool to monitor interfaces. In this work, solid-liquid interfaces are studied using the Kretschmann-Raether configuration for biosensing applications. The interface la
Externí odkaz:
http://arxiv.org/abs/2303.14636
Autor:
Cserni, G., Ambrózay, É., Serényi, P., Bori, R., Sejben, I., Csörgő, E., Serfőző, O., Lóránd, K., Venczel, L., Maráz, R., Sinkó, M., Szeleczki, N., Nyári, T., Zombori, T.
Publikováno v:
In European Journal of Surgical Oncology April 2022 48(4):742-747
Publikováno v:
Materials, Vol 16, Iss 8, p 3005 (2023)
The novel, single-sample concept combinatorial method, the so-called micro-combinatory technique, has been shown to be suitable for the high-throughput and complex characterization of multicomponent thin films over an entire composition range. This r
Externí odkaz:
https://doaj.org/article/e152c8cd77064d63805395b9ef3679b5
Autor:
Nikolett Hegedüs, Csaba Balázsi, Tamás Kolonits, Dániel Olasz, György Sáfrán, Miklós Serényi, Katalin Balázsi
Publikováno v:
Materials, Vol 15, Iss 18, p 6313 (2022)
In a single process run, an amorphous silicon oxynitride layer was grown, which includes the entire transition from oxide to nitride. The variation of the optical properties and the thickness of the layer was characterized by Spectroscopic Ellipsomet
Externí odkaz:
https://doaj.org/article/6dd877d250b44d7aac7b693eaed22bb8
Publikováno v:
J Mater Sci: Mater Electron (2008) 19:S289-S293
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less
Externí odkaz:
http://arxiv.org/abs/0902.1814
Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural s
Externí odkaz:
http://arxiv.org/abs/0902.1679
Autor:
Csik, A., Serenyi, M., Erdelyi, Z., Nemcsics, A., Cserhati, C., Langer, G. A., Beke, D. L., Frigeri, C., Simon, A.
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge multilayers were
Externí odkaz:
http://arxiv.org/abs/0902.1674
Akademický článek
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Instead of using frequency dependent refractive index, we propose to use the extinction theorem to describe reflection and transmission of an ultrashort pulse passing through the boundary. When the duration of the pulse is comparable with the relaxat
Externí odkaz:
http://arxiv.org/abs/physics/0007073
Akademický článek
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