Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Septic drain field"'
Autor:
Zhang Weihang, Qing Tang, Yinhe Wu, Jincheng Zhang, Zhihong Liu, Zhao-Xi Wu, Dujun Zhao, Zhongyang Li, Chao Duan, Qing Yang, Yue Hao, Shenglei Zhao, Wang Zhongxu, Bo Mei
Publikováno v:
Science China Information Sciences. 65
In this paper, Schottky-drain reverse-blocking AlN/AlGaN HEMTs with drain field plate (FP) have been investigated by Silvaco-ATLAS tools. For HEMTs without FP, with the increase of Al mole fraction in AlGaN channel from 0 to 0.5, the reverse-blocking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3eade67cc8e431c95837df81633378
https://doi.org/10.1007/s11432-020-3166-9
https://doi.org/10.1007/s11432-020-3166-9
Autor:
Qiuju Gao, Kristin M. Blum, Pablo Gago-Ferrero, Karin Wiberg, Lutz Ahrens, Patrik L. Andersson
Publikováno v:
Science of The Total Environment. 651:1670-1679
On-site sewage treatment facilities, particularly septic systems combined with soil infiltration, can be an important source of emerging organic contaminants in groundwater and surface water and thus represent a significant source of environmental an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb60a0fc993f71b9feda54e103484747
https://doi.org/10.1016/j.scitotenv.2018.10.016
https://doi.org/10.1016/j.scitotenv.2018.10.016
Autor:
Bernd Deutschmann, Gerhard Prechtl, Matteo Meneghini, Luca Sayadi, Nicola Modolo, Christian Koller, Andrea Minetto, Clemens Ostermaier, Enrico Zanoni, Oliver Häberlen, Sebastien Sicre
In this work, an analysis of the impact of drain field plate (FP) length on the semi- ON degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a fast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b18237efe3c8ed7d621cdb7ea9f13f3
http://hdl.handle.net/11577/3412527
http://hdl.handle.net/11577/3412527
Autor:
B. C. Wolverton
The use of natural biological processes for treating many types of wastewater have been developed by NASA at the John C. Stennis Space Center, NSTL, Mississippi, during the past 15 years. The simplest form of this technology involves the use of aquat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baad8bc313fc45062805abc0b2f0d782
https://doi.org/10.1201/9781003069850-14
https://doi.org/10.1201/9781003069850-14
Publikováno v:
EDIS. 2020
Septic systems are common throughout most rural areas, and their care and maintenance are essential to the health of people, wildlife, livestock, agricultural commodities, and water resources. One way to ensure optimal performance of your septic syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2a89f320594d6b4eb7c3464b84df5f
https://doi.org/10.32473/edis-ss687-2020
https://doi.org/10.32473/edis-ss687-2020
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW)
We present vertical InAs/InGaAsSb/GaSb nanowire tunnel FETs (TFETs) on Si demonstrating subthreshold swing (S) of 32 mV/dec with I ON = 4 µA/µm for I OFF = 1 nA/µm at V DS = 0.3V. The demonstrated drive currents is the highest reported for a TFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0ba0ea2c9bd82c0bace6f182b9e600e
https://doi.org/10.1109/snw50361.2020.9131656
https://doi.org/10.1109/snw50361.2020.9131656
Autor:
S Dutta
Publikováno v:
International Journal of Electronics. 105:1117-1128
The impact of ambient temperature on the drain current of a SiC Metal-Semiconductor Field Effect Transistor (MESFET) has been studied theoretically assuming the device is operating under two-region model. This study has been extended to explore the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2a2fe3ed47742b01e9fafa80891495
https://doi.org/10.1080/00207217.2018.1426119
https://doi.org/10.1080/00207217.2018.1426119
Publikováno v:
African Journal of Environmental Science and Technology; Vol 11, No 1 (2017); 11-18
Worldwide, 1.1 billion people do not have access to clean water and as a result, 2 million children die annually due to preventable waterborne diseases. In Uganda, 440 Children die every week of waterborne diseases. High prevalence of this death is r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8297bd94d5313146efc366c4732e4d0
https://doi.org/10.5897/ajest2016.2216
https://doi.org/10.5897/ajest2016.2216
Autor:
S Dutta
Publikováno v:
Superlattices and Microstructures. 101:446-454
This theoretical study includes the impact of ambient temperature fluctuations on the drain current of a SiC MESFET considering two field regions under the gate at a considerably high drain field. The variations of drain current of the device with am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3110fbc3fc3caf6cfc3d256af110fbc1
https://doi.org/10.1016/j.spmi.2016.12.010
https://doi.org/10.1016/j.spmi.2016.12.010
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
In this work, using a calibrated 2D TCAD simulation study, we propose and investigate a vertical dual source tri-line-gate (TLG) Tunnel Field-Effect Transistor (TFET) structure with U-shaped n+ pockets. The dual source configuration with U-shaped poc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08938238c788c6a548b0e388eb6e2727
https://doi.org/10.1109/s3s46989.2019.9320684
https://doi.org/10.1109/s3s46989.2019.9320684