Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Seppo Lindroos"'
Publikováno v:
Chemistry of Materials. 24:275-278
Selective-area atomic layer deposition (ALD) was achieved using microcontact printed RuOx films as an activation layer for ruthenium ALD process. Patterned RuOx films were prepared by transferring RuCl3 layer by a PDMS (polydimethylsiloxane) stamp to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77af5ae387526d8b26fb4a0f49515d4
https://doi.org/10.1021/cm202468s
https://doi.org/10.1021/cm202468s
Publikováno v:
Thin Solid Films. 460:36-40
Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0c35879b58dc2000f14b2be69ac80d
https://doi.org/10.1016/j.tsf.2004.01.065
https://doi.org/10.1016/j.tsf.2004.01.065
Publikováno v:
Solid State Phenomena. 94:261-264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ee70a9a07b84740cebb8696ee815ae
https://doi.org/10.4028/www.scientific.net/ssp.94.261
https://doi.org/10.4028/www.scientific.net/ssp.94.261
Publikováno v:
Thin Solid Films. 428:223-226
The successive ionic layer adsorption and reaction (SILAR) technique involves growth of thin films from solution, ionic layer by ionic layer at room temperature and normal pressure. The aim of this work is to characterize SILAR grown PbS thin films (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60a516892553ea965d8cbd26d946509
https://doi.org/10.1016/s0040-6090(02)01268-3
https://doi.org/10.1016/s0040-6090(02)01268-3
Autor:
Giedrius Laukaitis, Markku Leskelä, Sigitas Tamulevičius, Valentinas Snitka, Seppo Lindroos, Judita Puišo
Publikováno v:
Thin Solid Films. :457-461
Lead sulfide thin films were grown on (100)Si and (111)Si crystalline substrates by successive ionic layer adsorption and reaction, (SILAR), technique from solution phase at room temperature and normal pressure. The stress development, crystallinity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a58ba2318f011cc2efda39637ea156
https://doi.org/10.1016/s0040-6090(01)01662-5
https://doi.org/10.1016/s0040-6090(01)01662-5
Publikováno v:
Applied Surface Science. 185:134-139
Cadmium sulfide and zinc sulfide films were grown on (1 0 0)GaAs substrate by successive ionic layer adsorption and reaction (SILAR) technique from aqueous precursor solutions at room temperature and normal pressure. The stress development of the thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::399c5e4cfd9a34215ffe33ff20c6d9e0
https://doi.org/10.1016/s0169-4332(01)00775-9
https://doi.org/10.1016/s0169-4332(01)00775-9
Publikováno v:
Materials Science and Engineering: A. 288:223-230
Zinc sulfide thin films were grown on (100)GaAs by the successive ionic layer adsorption and reaction (SILAR) technique from dilute aqueous precursor solutions. The stress of thin films was characterized by means of laser interferometry, crystallinit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104c1fec7a6c2e84c451c89175964534
https://doi.org/10.1016/s0921-5093(00)00879-0
https://doi.org/10.1016/s0921-5093(00)00879-0
Publikováno v:
Applied Surface Science. 161:396-405
Cd x Zn 1− x S thin films were grown on (100)GaAs by the successive ionic layer adsorption and reaction (SILAR) technique from dilute aqueous precursor solutions. Crystallinity, refractive index and morphology of the thin films were studied as a fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db74de894f607c064ee95df91bb58b2
https://doi.org/10.1016/s0169-4332(00)00275-0
https://doi.org/10.1016/s0169-4332(00)00275-0
Autor:
Markku Leskelä, Seppo Lindroos
Publikováno v:
International Journal of Inorganic Materials. 2:197-201
Zinc peroxide, ZnO2, thin films were grown by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and normal pressure. The thin films were grown on glass, quartz, silicon, on poly(vinyl chloride) and polycarbonate sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b695e9406c44a3f7ef6d376c9255d6
https://doi.org/10.1016/s1466-6049(00)00017-9
https://doi.org/10.1016/s1466-6049(00)00017-9
Publikováno v:
Applied Surface Science. 158:75-80
The growth of copper sulfide thin films by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and normal pressure was studied. The CuS films were characterized by chemical analysis, XRD, SEM and UV spectroscopy. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e0c28e88014acd4e003eddbe4b75f5
https://doi.org/10.1016/s0169-4332(99)00582-6
https://doi.org/10.1016/s0169-4332(99)00582-6